On the mechanism for interface trap generation in MOS transistors due to channel hot carrier stressing by Zhi Chen, Karl Hess, Jinju Lee, Lyding, J.W., Rosenbaum, E., Kizilyalli, I., Chetlur, S., Huang, R.

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Synthesis of a new manufacturable high-quality graded gate oxide for sub-0.2 μm technologies by Roy, P.K., Yuanning Chen, Chetlur, S.

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Improvement of hot carrier reliability with deuterium anneals for manufacturing multilevel metal/dielectric MOS systems by Kizilyalli, I.C., Abeln, G.C., Chen, Z., Lee, J., Weber, G., Kotzias, B., Chetlur, S., Lyding, J.W., Hess, K.

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Deuterium isotope effect for AC and DC hot-carrier degradation of MOS transistors: a comparison study by Zhi Chen, Kangguo Cheng, Jinju Lee, Lyding, J.W., Hess, K., Chetlur, S.

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Synthesis of a new manufacturable high-quality graded gate oxide for sub-0.2 /spl mu/m technologies by Roy, P.K., Yuanning Chen, Chetlur, S.

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Synthesis of a new manufacturable high-quality graded gate oxide for sub-0.2 [mu]m technologies by Roy, P.K, Chen, Yuanning, Chetlur, S

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Synthesis of a new manufacturable high-quality graded gate oxidefor sub-0.2 mu m technologies by Roy, P K, Chen, Yuanning, Chetlur, S

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Role of holes in the isotope effect and mechanisms for the metal–oxide–semiconductor device degradation by Chen, Zhi, Garg, Pradeep, Singh, Vijay, Chetlur, Sundar

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An improved substrate current model for deep submicron MOSFETs by Li, Wei, Yuan, Jiann S., Chetlur, Sundar, Zhou, Jonathan, Oates, Anthony S.

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An improved substrate current model for deep submicron CMOS transistors by Wei Li, Yuan, J.S., Chetlur, S., Zhou, J., Oates, A.S.

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Multi-level metal CMOS manufacturing with deuterium for improved hot carrier reliability by Kizilyalli, I.C., Weber, G., Chen, Z., Abeln, G., Schonfield, M., Kotzias, B., Register, F., Harris, E., Sen, S., Chetlur, S., Patel, M., Stirling, L., Huang, R., Massengale, A., Roy, P.K., Higashi, G., Foley, E., Lee, J., Lyding, J., Hess, K.

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Early stage hot carrier degradation of state-of-the-art LDD N-MOSFETs by Manhas, S.K., de Souza, M.M., Gates, A.S., Chetlur, S.C., Sankara Narayanan, E.M.

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Hot-carrier-induced circuit degradation for 0.18 /spl mu/m CMOS technology by Wei Li, Qiang Li, Yuan, J.S., McConkey, J., Yuan Chen, Chetlur, S., Zhou, J., Oates, A.S.

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Influence of passivation anneal position on metal coverage dependent mismatch and hot carrier reliability by Chetlur, S., Sen, S., Harris, E., Vaidya, H., Kizilyalli, I., Gregor, R., Harding, B.

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Mechanism for hot-carrier-induced interface trap generation in MOS transistors by Zhi Chen, Hess, K., Jinju Lee, Lyding, J.W., Rosenbaum, E., Kizilyalli, I., Chetlur, S.

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Downlink Coverage Analysis for a Finite 3-D Wireless Network of Unmanned Aerial Vehicles by Chetlur, Vishnu Vardhan, Dhillon, Harpreet S.

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Coverage Analysis of a Vehicular Network Modeled as Cox Process Driven by Poisson Line Process by Chetlur, Vishnu Vardhan, Dhillon, Harpreet S.

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Coverage and Rate Analysis of Downlink Cellular Vehicle-to-Everything (C-V2X) Communication by Chetlur, Vishnu Vardhan, Dhillon, Harpreet S.

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Trends in fetal monitoring through phonocardiography: Challenges and future directions by Chetlur Adithya, Prashanth, Sankar, Ravi, Moreno, Wilfrido Alejandro, Hart, Stuart

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On the Load Distribution of Vehicular Users Modeled by a Poisson Line Cox Process by Chetlur, Vishnu Vardhan, Dhillon, Harpreet S.

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