Search Results - Chevalliez, S.

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  1. 1
    Impact of area scaling on the ferroelectric properties of back-end of line compatible Hf0.5Zr0.5O2 and Si:HfO2-based MFM capacitors

    Impact of area scaling on the ferroelectric properties of back-end of line compatible Hf0.5Zr0.5O2 and Si:HfO2-based MFM capacitors by Francois, T., Grenouillet, L., Coignus, J., Vaxelaire, N., Carabasse, C., Aussenac, F., Chevalliez, S., Slesazeck, S., Richter, C., Chiquet, P., Bocquet, M., Schroeder, U., Mikolajick, T., Gaillard, F., Nowak, E.

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  2. 2
    BEOL Integrated Ferroelectric HfO₂-Based Capacitors for FeRAM: Extrapolation of Reliability Performance to Use Conditions

    BEOL Integrated Ferroelectric HfO₂-Based Capacitors for FeRAM: Extrapolation of Reliability Performance to Use Conditions by Alcala, R., Materano, M., Lomenzo, P. D., Grenouillet, L., Francois, T., Coignus, J., Vaxelaire, N., Carabasse, C., Chevalliez, S., Andrieu, F., Mikolajick, T., Schroeder, U.

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  3. 3
    Low temperature FIB cross section: Application to indium micro bumps

    Low temperature FIB cross section: Application to indium micro bumps by Dantas de Morais, L., Chevalliez, S., Mouleres, S.

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  4. 4
    Impact of area scaling on the ferroelectric properties of back-end of line compatible Hf 0.5 Zr 0.5 O 2 and Si:HfO 2 -based MFM capacitors

    Impact of area scaling on the ferroelectric properties of back-end of line compatible Hf 0.5 Zr 0.5 O 2 and Si:HfO 2 -based MFM capacitors by Francois, T., Grenouillet, L., Coignus, J., Vaxelaire, N., Carabasse, C., Aussenac, F., Chevalliez, S., Slesazeck, S., Richter, C., Chiquet, P., Bocquet, Marc, Schroeder, U., Mikolajick, T., Gaillard, F., Nowak, E.

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  5. 5
    Carbon electrode for Ge-Se-Sb based OTS selector for ultra low leakage current and outstanding endurance

    Carbon electrode for Ge-Se-Sb based OTS selector for ultra low leakage current and outstanding endurance by Verdy, A., Navarro, G., Bernard, M., Chevalliez, S., Castellani, N., Nolot, E., Garrione, J., Noe, P., Bourgeois, G., Sousa, V., Cyrille, M.-C., Nowak, E.

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  6. 6
    Breakthroughs in 3D Sequential technology

    Breakthroughs in 3D Sequential technology by Brunet, L., Fenouillet-Beranger, C., Batude, P., Beaurepaire, S., Ponthenier, F., Rambal, N., Mazzocchi, V., Pin, J-B., Acosta-Alba, P., Kerdiles, S., Besson, P., Fontaine, H., Lardin, T., Fournel, F., Larrey, V., Mazen, F., Balan, V., Morales, C., Guerin, C., Jousseaume, V., Federspiel, X., Ney, D., Garros, X., Roman, A., Scevola, D., Perreau, P., Kouemeni-Tchouake, F., Arnaud, L., Scibetta, C., Chevalliez, S., Aussenac, F., Aubin, J., Reboh, S., Andrieu, F., Maitrejean, S., Vinet, M.

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  7. 7
    Improvement of HfO2 based RRAM array performances by local Si implantation

    Improvement of HfO2 based RRAM array performances by local Si implantation by Barlas, M., Grossi, A., Grenouillet, L., Vianello, E., Nolot, E., Vaxelaire, N., Blaise, P., Traore, B., Coignus, J., Perrin, F., Crochemore, R., Mazen, F., Lachal, L., Pauliac, S., Pellissier, C., Bernasconi, S., Chevalliez, S., Nodin, J. F., Perniola, L., Nowak, E.

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