Experimental determination of threshold voltage shifts due to quantum mechanical effects in MOS electron and hole inversion layers by Chindalore, G., Hareland, S.A., Jallepalli, S.A., Tasch, A.F., Maziar, C.M., Chia, V.K.F., Smith, S.

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A review of SIMS techniques for characterization of ultra low energy ion implants by Smith, S.P., Chia, V.K.F., Hitzman, C.J., Mount, G.

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Tool cleanliness characterization for improving productivity and yields by Chia, V.K.F.

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A review of analytical techniques for process control of contaminants introduced during ion implantation by Biswas, S., Kelly, I., Chia, V.K.F., Lindley, P., Edgell, M.J.

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Understanding the correlation of TXRF and surface SIMS by Smith, S.P., Metz, J.M., Chia, V.K.F.

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Ultrahigh‐vacuum apparatus for surface spectroscopy and characterization at cryogenic temperatures by Chia, Victor K. F., Veirs, D. Kirk, Rosenblatt, Gerd M.

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Ion implanter diagnostics using SurfaceSIMS by Smith, S.P., Chia, V.K.F., Ming Hong Yang

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SIMS modular approach to ultra-low energy implants for accurate TCAD process simulation modeling by Chia, V.K.F., Edgell, M.J., Biswas, S.

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Test structure and methodology for experimental extraction of threshold voltage shifts due to quantum mechanical effects in MOS inversion layers by Chindalore, G., Hareland, S., Jallepalli, S., Fasch, A.F., Maziar, C.M., Chia, V.K.F., Smith, S.

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Electrochemical processes at well-defined surfaces by Hubbard, A.T., Stickney, J.L., Soriaga, M.P., Chia, V.K.F., Rosasco, S.D., Schardt, B.C., Solomun, T., Song, D., White, J.H., Wieckohski, A.

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