MBE growth of ultra small coherent Ge quantum dots in silicon for applications in nanoelectronics by Pchelyakov, O.P., Nikiforov, A.I., Olshanetsky, B.Z., Teys, S.A., Yakimov, A.I., Chikichev, S.I.

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Atomic structure and electronic properties of HCl–isopropanol treated and vacuum annealed GaAs(100) surface by Tereshchenko, O.E, Chikichev, S.I, Terekhov, A.S

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Ellipsometric detection of transitional surface structures on decapped GaAs by Vasev, A.V., Chikichev, S.I., Semyagin, B.R.

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Time-resolved microellipsometry for rapid thermal processes monitoring by Spesivtsev, E.V., Rykhlitsky, S.V., Shvets, V.A., Chikichev, S.I., Mardezhov, A.S., Nazarov, N.I., Volodin, V.A.

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Ellipsometric Detection of Transitional Surface Structures on Decapped GaAs(001) by Vasev, A.V., Chikichev, S.I.

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Nano: Quo vadis? by Chikichev, S.I.

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Ellipsometric study of tellurium molecular beam interaction with dehydrogenated vicinal silicon surfaces by Shvets, V.A, Chikichev, S.I, Pridachin, D.N, Yakushev, M.V, Sidorov, Yu.G, Mardezhov, A.S

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Study of GaAs MBE growth under Ga-rich conditions by RHEED intensity oscillations by Bosacchi, A., Franchi, S., Kanter, Yu.O., Chikichev, S.I.

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Surface segregation in pseudomorphic Si/sub x/Ge/sub 1-x/ crystals by Vasev, A.V., Chikichev, I.S., Chikichev, S.I.

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Phase diagram for pseudomorphic Si/sub x/Ge/sub 1-x/ crystals by Chikichev, I.S., Vasev, A.V., Chikichev, S.I.

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GaAs MBE growth under Ga-rich conditions studied by RHEED intensity oscillations by Bosacchi, A., Franchi, S., Kanter, Yu.O., Chikichev, S.I.

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