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13.4 A 512Gb 3-bit/Cell 3D 6th-Generation V-NAND Flash Memory with 82MB/s Write Throughput and 1.2Gb/s Interface
by
Kang, Dongku
,
Kim, Minsu
,
Jeon, Su Chang
,
Jung, Wontaeck
,
Park, Jooyong
,
Choo, Gyosoo
,
Shim, Dong-kyo
,
Kavala, Anil
,
Kim, Seung-Bum
,
Kang, Kyung-Min
,
Lee, Jiyoung
,
Ko, Kuihan
,
Park, Hyun-Wook
,
Min, Byung-Jun
,
Yu, Changyeon
,
Yun, Sewon
,
Kim, Nahyun
,
Jung, Yeonwook
,
Seo, Sungwhan
,
Kim, Sunghoon
,
Lee, Moo Kyung
,
Park, Joo-Yong
,
Kim, James C.
,
Cha, Young San
,
Kim, Kwangwon
,
Jo, Youngmin
,
Kim, Hyunjin
,
Choi, Youngdon
,
Byun, Jindo
,
Park, Ji-hyun
,
Kim, Kiwon
,
Kwon, Tae-Hong
,
Min, Youngsun
,
Yoon, Chiweon
,
Kim, Youngcho
,
Kwak, Dong-Hun
,
Lee, Eungsuk
,
Hahn, Wook-ghee
,
Kim, Ki-sung
,
Kim, Kyungmin
,
Yoon, Euisang
,
Kim, Won-Tae
,
Lee, Inryoul
,
Moon, Seung hyun
,
Ihm, Jeongdon
,
Byeon, Dae Seok
,
Song, Ki-Whan
,
Hwang, Sangjoon
,
Kyung, Kye Hyun
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Conference Proceeding
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Capacitance
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Flash Memories
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Programming
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Sensors
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Three-Dimensional Displays
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Throughput
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