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Resistive switching effect in HfxAl1−xOy with a graded Al depth profile studied by hard X-ray photoelectron spectroscopy
by
Matveyev, Yu.А.
,
Markeev, A.M.
,
Lebedinskii, Yu.Yu
,
Chouprik, A.А.
,
Egorov, K.V.
,
Drube, W.
,
Zenkevich, A.V.
Published in
Thin solid films
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Thin Solid Films
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Subjects
Aluminum
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Hard X-Ray Photoelectron Spectroscopy
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Hfxal1−Xoy
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Materials Science
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Materials Science, Coatings & Films
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Materials Science, Multidisciplinary
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Memristor
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Multilevel Resistive Switching
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Oxygen Vacancies
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Photoelectron Spectroscopy
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Physical Sciences
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Physics
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Physics, Applied
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Physics, Condensed Matter
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Platinum
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Potential Distribution
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Science & Technology
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Stacks
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Switching
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Technology
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Sciencedirect®
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Backfile Package - Physics General (Legacy) [Ypa]
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