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Low-Temperature Microwave Annealing Processes for Future IC Fabrication-A Review
by
Lee, Yao-Jen
,
Cho, Ta-Chun
,
Chuang, Shang-Shiun
,
Hsueh, Fu-Kuo
,
Lu, Yu-Lun
,
Sung, Po-Jung
,
Chen, Hsiu-Chih
,
Current, Michael I.
,
Tseng, Tseung-Yuen
,
Chao, Tien-Sheng
,
Hu, Chenming
,
Yang, Fu-Liang
Published in
IEEE transactions on electron devices
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Experimental Realization of a Ternary-Phase Alloy Through Microwave-Activated Annealing for Ge Schottky pMOSFETs
by
Hsu, Chung-Chun
,
Chi, Wei-Chun
,
Tsai, Yi-He
,
Chou, Chen-Han
,
Chen, Che-Wei
,
Chien, Hung-Pin
,
Chuang, Shang-Shiun
,
Luo, Guang-Li
,
Lee, Yao-Jen
,
Chien, Chao-Hsin
Published in
IEEE transactions on electron devices
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Dopant Activation in Single-Crystalline Germanium by Low-Temperature Microwave Annealing
by
LEE, Yao-Jen
,
CHUANG, Shang-Shiun
,
HSUEH, Fu-Kuo
,
LIN, Ho-Ming
,
WU, Shich-Chuang
,
WU, Ching-Yi
,
TSENG, Tseung-Yuen
Published in
IEEE electron device letters
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Ultra-Shallow Junction Formation by Monolayer Doping Process in Single Crystalline Si and Ge for Future CMOS Devices
by
Chuang, Shang-Shiun
,
Cho, Ta-Chun
,
Sung, Po-Jung
,
Kao, Kuo-Hsing
,
Chen, Henry J. H.
,
Lee, Yao-Jen
,
Current, Michael I.
,
Tseng, Tseung-Yuen
Published in
ECS journal of solid state science and technology
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Diamond-shaped Ge and Ge0.9Si0.1 gate-all-around nanowire FETs with four facets by dry etch technology
by
Yao-Jen Lee
,
Fu-Ju Hou
,
Shang-Shiun Chuang
,
Fu-Kuo Hsueh
,
Kuo-Hsing Kao
,
Po-Jung Sung
,
Wei-You Yuan
,
Jay-Yi Yao
,
Yu-Chi Lu
,
Kun-Lin Lin
,
Chien-Ting Wu
,
Hisu-Chih Chen
,
Bo-Yuan Chen
,
Guo-Wei Huang
,
Chen, Henry J. H.
,
Jiun-Yun Li
,
Yiming Li
,
Samukawa, Seiji
,
Tien-Sheng Chao
,
Tseung-Yuen Tseng
,
Wen-Fa Wu
,
Tuo-Hung Hou
,
Wen-Kuan Yeh
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Corrections to "Low-Temperature Microwave Annealing Processes for Future IC Fabrication-A Review"
by
Lee, Yao-Jen
,
Cho, Ta-Chun
,
Chuang, Shang-Shiun
,
Hsueh, Fu-Kuo
,
Lu, Yu-Lun
,
Sung, Po-Jung
,
Chen, Hsiu-Chih
,
Current, Michael I.
,
Tseng, Tseung-Yuen
,
Chao, Tien-Sheng
,
Hu, Chenming
,
Yang, Fu-Liang
Published in
IEEE transactions on electron devices
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