Search Results - Chung, H.Y.A.

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  1. 1
    NH3-RTP grown ultra-thin oxynitride layers for MOS gate applications

    NH3-RTP grown ultra-thin oxynitride layers for MOS gate applications by Chung, H.Y.A., Dietl, W., Niess, J., Nényei, Z., Lerch, W., Wieczorek, K., Krumm, N., Ludsteck, A., Eisele, I.

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  2. 2
    NH 3-RTP grown ultra-thin oxynitride layers for MOS gate applications

    NH 3-RTP grown ultra-thin oxynitride layers for MOS gate applications by Chung, H.Y.A., Dietl, W., Niess, J., Nényei, Z., Lerch, W., Wieczorek, K., Krumm, N., Ludsteck, A., Eisele, I.

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  3. 3
    Multiple-step annealing for 50% enhanced p-conductivity of GaN

    Multiple-step annealing for 50% enhanced p-conductivity of GaN by Chung, H.Y.A., Pelzmann, A., Drechsler, M., Scherer, M, Schwegler, V., Seyboth, M., Kirchner, C., Kamp, M.

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  4. 4
    Very low threshold current density 1.3 /spl mu/m-InAsP/InGaAsP strained quantum well GRINSCH lasers grown by gas source MBE

    Very low threshold current density 1.3 /spl mu/m-InAsP/InGaAsP strained quantum well GRINSCH lasers grown by gas source MBE by Chung, H.Y.A., Stareev, G., Joos, J., Maehnss, J., Ebeling, K.

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  5. 5
    Hydride Vapour Phase Epitaxy Growth of GaN Layers under Reduced Reactor Pressure

    Hydride Vapour Phase Epitaxy Growth of GaN Layers under Reduced Reactor Pressure by Chung, H.Y.A., Wang, C., Kirchner, Ch, Seyboth, M., Schwegler, V., Scherer, M., Kamp, M., Ebeling, K.J.E., Beccard, R., Heuken, M.

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