Controllable resistive switching behaviors in heteroepitaxial LaNiO 3 /Nb:SrTiO 3 Schottky junctions through oxygen vacancies engineering by Zhang, Yong, Gao, Shunhua, Cao, Guiming, Ma, Chunrui, Nan, Hu, Liu, Ming

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Ultrahigh-temperature capacitors realized by controlling polarization behavior in relaxor ferroelectric by Hu, Tian-Yi, Ma, Chunrui, Cheng, Shao-dong, Hu, Guangliang, Liu, Ming

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Controlling dielectric and relaxor-ferroelectric properties for energy storage by tuning Pb0.92La0.08Zr0.52Ti0.48O3 film thickness by Brown, Emery, Ma, Chunrui, Acharya, Jagaran, Ma, Beihai, Wu, Judy, Li, Jun

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Bending Modulated Ultralarge Magnetoresistance in Flexible La0.67Ba0.33MnO3 Thin Film Based Device by Shen, Lvkang, Zhang, Yang, Liu, Tianyu, Wang, He, Ma, Chunrui, Liu, Ming

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Large Energy Density, Excellent Thermal Stability, and High Cycling Endurance of Lead-Free BaZr0.2Ti0.8O3 Film Capacitors by Sun, Zixiong, Ma, Chunrui, Wang, Xi, Liu, Ming, Lu, Lu, Wu, Ming, Lou, Xiaojie, Wang, Hong, Jia, Chun-Lin

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Bending Switch of Gigahertz La 0.67 Sr 0.33 MnO 3 Thin Film Under Spin Wave Excitation by Wang, He, Shen, Lvkang, Ma, Chunrui, Jin, Jing, Cao, Cuimei, Jiang, Changjun, Liu, Ming

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Bending Modulated Ultralarge Magnetoresistance in Flexible La 0.67 Ba 0.33 MnO 3 Thin Film Based Device by Shen, Lvkang, Zhang, Yang, Liu, Tianyu, Wang, He, Ma, Chunrui, Liu, Ming

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Ultrahigh Temperature Lead‐Free Film Capacitors via Strain and Dielectric Constant Double Gradient Design by Fan, Jiangqi, Hu, Tian‐Yi, Ma, Chuansheng, Ma, Chunrui, Lu, Rui, Jin, Jing, Hu, Guangliang, Liu, Ming, Jia, Chun‐Lin

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Improving High-Temperature Energy Storage Performance of Silicon-Integrated Oxide Film Capacitors via Inserting a Graphene Buffer Layer by Jin, Jing, Ma, Chuansheng, Hu, Guangliang, Jin, Meng, Fan, Qiaolan, Ma, Chunrui, Liu, Ming

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Enhanced dielectric energy storage in multilayer films valley-type structural design by Hu, Tian-Yi, Lu, Yiqin, Zhang, Yunbo, Ma, Chunrui, Cheng, Shao-Dong, Hu, Guangliang, Liu, Ming

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Electrochemically driven dual bipolar resistive switching in LaNiO3/SmNiO3/Nb:SrTiO3 heterostructures fabricated through selective area epitaxy by Zhang, Yong, Liu, Ming, Ma, Chunrui, Lu, Lu, Chuan Yu Han

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Enhanced energy storage performance of 0.85BaTiO3–0.15Bi(Mg0.5Hf0.5)O3 films via synergistic effect of defect dipole and oxygen vacancy engineering by Fu, Weijie, Lu, Yi-qin, Han, Qiuyang, Hu, Tian-Yi, Duan, Tingzhi, Liu, Yupeng, Cheng, Shao-Dong, Dai, Yanzhu, Liu, Ming, Ma, Chunrui

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Integration of Both Invariable and Tunable Microwave Magnetisms in a Single Flexible La0.67Sr0.33MnO3 Thin Film by Wang, He, Shen, Lvkang, Duan, Tingzhi, Ma, Chunrui, Cao, Cuimei, Jiang, Changjun, Lu, Xiaoli, Sun, Huiyuan, Liu, Ming

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Bending Switch of Gigahertz La0.67Sr0.33MnO3 Thin Film Under Spin Wave Excitation by Wang, He, Shen, Lvkang, Ma, Chunrui, Jin, Jing, Cao, Cuimei, Jiang, Changjun, Liu, Ming

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Interface thickness optimization of lead-free oxide multilayer capacitors for high-performance energy storage by Sun, Zixiong, Wang, Linxi, Liu, Ming, Ma, Chunrui, Liang, Zhongshuai, Fan, Qiaolan, Lu, Lu, Lou, Xiaojie, Wang, Hong, Jia, Chun-Lin

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Realizing high energy density and efficiency simultaneously via sub-grain modification in lead-free dielectric films by Hu, Tian-Yi, Ma, Chuansheng, Fan, Jiangqi, Wu, Yilin, Liu, Ming, Hu, Guangliang, Ma, Chunrui, Jia, Chun-Lin

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A Power Load Forecasting Model Based on FA-CSSA-ELM by Wang, Zuoxun, Wang, Xinheng, Ma, Chunrui, Song, Zengxu

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Detangling extrinsic and intrinsic hysteresis for detecting dynamic switch of electric dipoles using graphene field-effect transistors on ferroelectric gates by Ma, Chunrui, Gong, Youpin, Lu, Rongtao, Brown, Emery, Ma, Beihai, Li, Jun, Wu, Judy

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Energy storage performance of silicon-integrated epitaxial lead-free BaTiO3-based capacitor by Zhao, Fan, Jin, Jing, Hu, Guangliang, Ma, Chunrui, Lu, Lu, Hu, Tianyi, Liu, Yupeng, Hu, Dengwei, Liu, Ming, Jia, Chun-Lin

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A polarization double-enhancement strategy to achieve super low energy consumption with ultra-high energy storage capacity in BCZT-based relaxor ferroelectrics by Sun, Zixiong, Bai, Yuhan, Jing, Hongmei, Hu, Tianyi, Du, Kang, Guo, Qing, Gao, Pan, Tian, Ye, Ma, Chunrui, Liu, Ming, Pu, Yongping

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