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Mg activation anneal of the p-GaN body in trench gate MOSFETs and its effect on channel mobility and threshold voltage stability
by
Filho, Walter Gonçalez
,
Borga, Matteo
,
Geens, Karen
,
Khan, Md Arif
,
Cingu, Deepthi
,
Chatterjee, Urmimala
,
Vohra, Anurag
,
Decoutere, Stefaan
,
Bakeroot, Benoit
Published in
Applied physics letters
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Development and analysis of thick GaN drift layers on 200 mm CTE-matched substrate for vertical device processing
by
Gonçalez Filho, Walter
,
Borga, Matteo
,
Geens, Karen
,
Cingu, Deepthi
,
Chatterjee, Urmimala
,
Banerjee, Sourish
,
Vohra, Anurag
,
Han, Han
,
Minj, Albert
,
Hahn, Herwig
,
Marx, Matthias
,
Fahle, Dirk
,
Bakeroot, Benoit
,
Decoutere, Stefaan
Published in
Scientific reports
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Electrical Stability of MOS Structures With AlON and Al₂O₃ Dielectrics Deposited on n- and p-Type GaN
by
Filho, Walter Goncalez
,
Borga, Matteo
,
Geens, Karen
,
Khan, Md Arif
,
Cingu, Deepthi
,
Chatterjee, Urmimala
,
Decoutere, Stefaan
,
Knaepen, Werner
,
Kizir, Seda
,
Arnou, Panagiota
,
Bakeroot, Benoit
Published in
IEEE transactions on electron devices
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Reliability of p-GaN Gate HEMTs in Reverse Conduction
by
Cingu, Deepthi
,
Li, Xiangdong
,
Bakeroot, Benoit
,
Amirifar, Nooshin
,
Geens, Karen
,
Jacobs, Kristof J. P.
,
Zhao, Ming
,
You, Shuzhen
,
Groeseneken, Guido
,
Decoutere, Stefaan
Published in
IEEE transactions on electron devices
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