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Controlled fabrication of Si nanocrystals embedded in thin SiON layers by PPECVD followed by oxidizing annealing
by
Perret-Tran-Van, S
,
Makasheva, K
,
Despax, B
,
Bonafos, C
,
Coulon, P E
,
Paillard, V
Published in
Nanotechnology
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Tailoring of SiC nanoprecipitates formed in Si
by
Velisa, G.
,
Trocellier, P.
,
Thomé, L.
,
Vaubaillon, S.
,
Miro, S.
,
Serruys, Y.
,
Bordas, É.
,
Meslin, E.
,
Mylonas, S.
,
Coulon, P.E.
,
Leprêtre, F.
,
Pilz, A.
,
Beck, L.
Published in
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms
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Infrared spectroscopy and X-ray diffraction studies on the crystallographic evolution of La2O3 films upon annealing
by
TSOUTSOU, D
,
SCAREL, G
,
DEBERNARDI, A
,
CAPELLI, S. C
,
VOLKOS, S. N
,
LAMAGNA, L
,
SCHAMM, S
,
COULON, P. E
,
FANCIULLI, M
Published in
Microelectronic engineering
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Combining HRTEM–EELS nano-analysis with capacitance–voltage measurements to evaluate high-κ thin films deposited on Si and Ge as candidate for future gate dielectrics
by
Schamm-Chardon, S.
,
Coulon, P.E.
,
Lamagna, L.
,
Wiemer, C.
,
Baldovino, S.
,
Fanciulli, M.
Published in
Microelectronic engineering
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Erratum to “Infrared spectroscopy and X-ray diffraction studies on the crystallographic evolution of La2O3 films upon annealing” Microelectronic Engineering 85 (2008) 2411–2413...
by
Tsoutsou, D.
,
Scarel, G.
,
Debernardi, A.
,
Capelli, S.C.
,
Volkos, S.N.
,
Lamagna, L.
,
Schamm, S.
,
Coulon, P.E.
,
Fanciulli, M.
Published in
Microelectronic engineering
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Erratum to “Infrared spectroscopy and X-ray diffraction studies on the crystallographic evolution of La 2O 3 films upon annealing” Microelectronic Engineering 85 (2008) 2411–2413...
by
Tsoutsou, D.
,
Scarel, G.
,
Debernardi, A.
,
Capelli, S.C.
,
Volkos, S.N.
,
Lamagna, L.
,
Schamm, S.
,
Coulon, P.E.
,
Fanciulli, M.
Published in
Microelectronic engineering
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Infrared spectroscopy and X-ray diffraction studies on the crystallographic evolution of La 2O 3 films upon annealing
by
Tsoutsou, D.
,
Scarel, G.
,
Debernardi, A.
,
Capelli, S.C.
,
Volkos, S.N.
,
Lamagna, L.
,
Schamm, S.
,
Coulon, P.E.
,
Fanciulli, M.
Published in
Microelectronic engineering
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