Electron mobility enhancement in strained-Si n-MOSFETs fabricated on SiGe-on-insulator (SGOI) substrates by Zhi-Yuan Cheng, Currie, M.T., Leitz, C.W., Taraschi, G., Fitzgerald, E.A., Hoyt, J.L., Antoniadas, D.A.

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Scalability of strained-Si nMOSFETs down to 25 nm gate length by Jung-Suk Goo, Qi Xiang, Takamura, Y., Haihong Wang, Pan, J., Arasnia, F., Paton, E.N., Besser, P., Sidorov, M.V., Adem, E., Lochtefeld, A., Braithwaite, G., Currie, M.T., Hammond, R., Bulsara, M.T., Ming-Ren Lin

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Dislocation dynamics in relaxed graded composition semiconductors by Fitzgerald, E.A, Kim, A.Y, Currie, M.T, Langdo, T.A, Taraschi, G, Bulsara, M.T

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Strained Si on insulator technology: from materials to devices by Langdo, T.A, Currie, M.T, Cheng, Z.-Y, Fiorenza, J.G, Erdtmann, M, Braithwaite, G, Leitz, C.W, Vineis, C.J, Carlin, J.A, Lochtefeld, A, Bulsara, M.T, Lauer, I, Antoniadis, D.A, Somerville, M

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Analysis of carrier generation lifetime in strained-Si/SiGe heterojunction MOSFETs from capacitance transient by Bera, L.K., Mathew, Shajan, Balasubramanian, N., Braithwaite, G., Currie, M.T., Singaporewala, F., Yap, J., Hammond, R., Lochtefeld, A., Bulsara, M.T., Fitzgerald, E.A.

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Fully depleted n-MOSFETs on supercritical thickness strained SOI by Lauer, I., Langdo, T.A., Cheng, Z.-Y., Fiorenza, J.G., Braithwaite, G., Currie, M.T., Leitz, C.W., Lochtefeld, A., Badawi, H., Bulsara, M.T., Somerville, M., Antoniadis, D.A.

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N2O oxidation of strained-Si/relaxed-SiGe heterostructure grown by UHVCVD by Tan, C.S., Choi, W.K., Bera, L.K., Pey, K.L., Antoniadis, D.A., Fitzgerald, E.A., Currie, M.T., Maiti, C.K.

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High minority-carrier lifetimes in GaAs grown on low-defect-density Ge/GeSi/Si substrates by Sieg, R. M., Carlin, J. A., Boeckl, J. J., Ringel, S. A., Currie, M. T., Ting, S. M., Langdo, T. A., Taraschi, G., Fitzgerald, E. A., Keyes, B. M.

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N 2O oxidation of strained-Si/relaxed-SiGe heterostructure grown by UHVCVD by Tan, C.S., Choi, W.K., Bera, L.K., Pey, K.L., Antoniadis, D.A., Fitzgerald, E.A., Currie, M.T., Maiti, C.K.

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Strained silicon: engineered substrates and device integration by Currie, M.T.

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SiGe-On-Insulator (SGOI): substrate preparation and MOSFET fabrication for electron mobility evaluation by Zhi-Yuan Cheng, Currie, M.T., Leitz, C.W., Taraschi, G., Pitera, A., Lee, M.L., Langdo, T.A., Hoyt, J.L., Antoniadis, D.A., Fitzgerald, E.A.

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Impact of threading dislocations on both n/p and p/n single junction GaAs cells grown on Ge/SiGe/Si substrates by Andre, C.L., Khan, A., Gonzalez, M., Hudait, M.K., Fitzgerald, E.A., Carlin, J.A., Currie, M.T., Leitz, C.W., Langdo, T.A., Clark, E.B., Wilt, D.M., Ringel, S.A.

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A new ultra-hard etch-stop layer for high precision micromachining by Borenstein, J.T., Gerrish, N.D., Currie, M.T., Fitzgerald, E.A.

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DC and RF characterization of fully depleted strained SOI MOSFETs by Chen, C.L., Langdo, T.A., Chen, C.K., Fiorenza, J.G., Wyatt, P.W., Currie, M.T., Leitz, C.W., Braithwaite, G., Fritze, M., Lambert, R., Yost, D.-R., Cheng, Z., Lochtefeld, A., Keast, C.K.

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Characterization of electroless nickel-phosphorus plating for ultracold-neutron storage by Akatsuka, H., Andalib, T., Bell, B., Berean-Dutcher, J., Bernier, N., Bidinosti, C.P., Cude-Woods, C., Currie, S.A., Davis, C.A., Franke, B., Gaur, R., Giampa, P., Hansen-Romu, S., Hassan, M.T., Hatanaka, K., Higuchi, T., Gibson, C., Ichikawa, G., Ide, I., Imajo, S., Ito, T.M., Jamieson, B., Kawasaki, S., Kitaguchi, M., Klassen, W., Korkmaz, E., Kuchler, F., Lang, M., Lavvaf, M., Lindner, T., Makela, M., Mammei, J., Mammei, R., Martin, J.W., Matsumiya, R., Miller, E., Mishima, K., Momose, T., Morawetz, S., Morris, C.L., Ong, H.J., O’Shaughnessy, C.M., Pereira-Wilson, M., Picker, R., Piermaier, F., Pierre, E., Schreyer, W., Sidhu, S., Stang, D., Tiepo, V., Vanbergen, S., Wang, R., Wong, D., Yamamoto, N.

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Characterization of the new Ultracold Neutron beamline at the LANL UCN facility by Wong, D.K.-T., Hassan, M.T., Burdine, J.F., Chupp, T.E., Clayton, S.M., Cude-Woods, C., Currie, S.A., Ito, T.M., Liu, C.-Y., Makela, M., Morris, C.L., O’Shaughnessy, C.M., Reid, A., Sachdeva, N., Uhrich, F.W.

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Socioeconomic position, macroeconomic environment and overweight among adolescents in 35 countries by Due, P, Damsgaard, M.T, Rasmussen, M, Holstein, B.E, Wardle, J, Merlo, J, Currie, C, Ahluwalia, N, Sorensen, T.I.A, Lynch, J

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Projection imaging with ultracold neutrons by Kuk, K., Cude-Woods, C., Chavez, C.R., Choi, J.H., Estrada, J., Hoffbauer, M., Holland, S.E., Makela, M., Morris, C.L., Ramberg, E., Adamek, E.R., Bailey, T., Blatnik, M., Broussard, L.J., Brown, M.A.-P., Callahan, N.B., Clayton, S.M., Currie, S., Filippone, B.W., Fries, E.M., Geltenbort, P., Gonzalez, F., Hassan, M.T., Hayen, L., Hickerson, K.P., Holley, A.T., Ito, T.M., Liu, C.-Y., Merkel, P., Musedinovic, R., O’Shaughnessy, C., Pattie, R.W., Plaster, B., Salvat, D.J., Saunders, A., Sharapov, E.I., Sun, X., Tang, Z., Wei, W., Wexler, J.W., Young, A.R., Wang, Zhehui

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Whole-genome sequencing to investigate a non-clonal melioidosis cluster on a remote Australian island by Sarovich, Derek S, Chapple, Stephanie N J, Price, Erin P, Mayo, Mark, Holden, Matthew T G, Peacock, Sharon J, Currie, Bart J

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The Urbanization of an Idea: Imagining Nature Through Urban Growth Boundary Policy in Portland, Oregon by Huber, Matthew T., Currie, Timothy M.

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