MOCVD Ge3Sb2Te5 for PCM Applications by ZHENG, J. F, REED, J, LOWREY, T, SCHELL, C, CZUBATYJ, W, SANDOVAL, R, FOURNIER, J, LI, W, HUNKS, W, DENNISON, C, HUDGENS, S

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Total dose radiation response and high temperature imprint characteristics of chalcogenide based RAM resistor elements by Bernacki, S., Hunt, K., Tyson, S., Hudgens, S., Pashmakov, B., Czubatyj, W.

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MOCVD \hbox\hbox\hbox for PCM Applications by Zheng, J F, Reed, J, Schell, C, Czubatyj, W, Sandoval, R, Fournier, J, Li, W, Hunks, W, Dennison, C, Hudgens, S, Lowrey, T

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MOCVD hbox Ge 3 hbox Sb 2 hbox Te 5 for PCM Applications by Zheng, J F, Reed, J, Schell, C, Czubatyj, W, Sandoval, R, Fournier, J, Li, W, Hunks, W, Dennison, C, Hudgens, S, Lowrey, T

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MOCVD [Formula Omitted] for PCM Applications by Zheng, J. F, Reed, J, Schell, C, Czubatyj, W, Sandoval, R, Fournier, J, Li, W, Hunks, W, Dennison, C, Hudgens, S, Lowrey, T

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Double-injection field-effect transistor: a new type of solid-state device by HACK, M, SHUR, M, CZUBATYJ, W

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Low-temperature polycrystalline-silicon TFT on 7059 glass by Czubatyj, W., Beglau, D., Himmler, R., Wicker, G., Jablonski, D., Guha, S.

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Metal-insulator-semiconductor solar cells using amorphous Si:F:H alloys by Madan, A., McGill, J., Czubatyj, W., Yang, J., Ovshinsky, S. R.

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On the mechanism of light-induced effects in hydrogenated amorphous silicon alloys by GUHA, S, YANG, J, CZUBATYJ, W, HUDGENS, S. J, HACK, M

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Differences between the bonding of oxygen in glow discharge deposited a-Si:H and a-Ge:H by Lucovsky, G., Chao, S.S., Yang, J., Tyler, J.E., Czubatyj, W.

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Schottky barrier profiles in amorphous silicon-based materials by Shur, M., Czubatyj, W., Madan, A.

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Recombination mechanisms in amorphous silicon-based alloys by Adler, D., Silver, M., Madan, A., Czubatyj, W.

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Minority-carrier diffusion lengths in amorphous silicon-based alloys by Hack, M., McGill, J., Czubatyj, W., Singh, R., Shur, M., Madan, A.

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Transferred-electron effects in n -GaAs under hydrostatic pressure by Czubatyj, W., Shaw, M. P.

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Amorphous silicon based alloy solar cell modeling with new diffusion length interpretation by Hack, M., Shur, M., Czubatyj, W., Yang, J., McGill, J.

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Observation of two modes of current transport through phosphorus-doped amorphous hydrogenated silicon Schottky barriers by Madan, A., Czubatyj, W., Yang, J., Shur, M. S., Shaw, M. P.

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Some electrical and optical properties of a-Si:F:H alloys by Madan, A., Ovshinsky, S. R., Czubatyj, W., Shur, M.

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Vibrational properties of deuterated a-Si alloys by Lucovsky, G., Yang, J., Chao, S.S., Tyler, J.E., Czubatyj, W.

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Determination of depletion width in amorphous materials using a simple analytical model by Shur, M., Czubatyj, W., Madan, A.

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Nitrogen-bonding environments in glow-discharge―deposited a-Si:H films by LUCOVSKY, G, YANG, J, CHAO, S. S, TYLER, J. E, CZUBATYJ, W

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