Electrical analysis of mechanical stress induced by STI in short MOSFETs using externally applied stress by Gallon, C., Reimbold, G., Ghibaudo, G., Bianchi, R.A., Gwoziecki, R., Orain, S., Robilliart, E., Raynaud, C., Dansas, H.

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FDSOI bottom MOSFETs stability versus top transistor thermal budget featuring 3D monolithic integration by Fenouillet-Beranger, C., Previtali, B., Batude, P., Nemouchi, F., Cassé, M., Garros, X., Tosti, L., Rambal, N., Lafond, D., Dansas, H., Pasini, L., Brunet, L., Deprat, F., Grégoire, M., Mellier, M., Vinet, M.

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Specifications for Hard Condensed Matter Specimens for Three-Dimensional High-Resolution Tomographies by Bleuet, P., Audoit, G., Barnes, J.-P., Bertheau, J., Dabin, Y., Dansas, H., Fabbri, J.-M., Florin, B., Gergaud, P., Grenier, A., Haberfehlner, G., Lay, E., Laurencin, J., Serra, R., Villanova, J.

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Resistance switching in HfO2-based OxRRAM devices by CALKA, P, MARTINEZ, E, LAFOND, D, DANSAS, H, TIRANO, S, JOUSSEAUME, V, BERTIN, F, GUEDJ, C

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Transistors on hybrid UTBB/Bulk substrates fabricated by local internal BOX dissolution by Nguyen, P., Andrieu, F., Cassé, M., Tabone, C., Perreau, P., Lafond, D., Dansas, H., Tosti, L., Veytizou, C., Landru, D., Kononchuk, O., Guiot, E., Nguyen, B.-Y., Faynot, O., Poiroux, T.

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SiGe Bandgap Tuning for High Speed Eam by Mastronardi, Lorenzo, Banakar, Mehdi, Khokhar, Ali Z., Domínguez Bucio, Thalía, Littlejohns, Callum G, Bernier, Nicolas, Robin, Eric, Rouviere, Jean-Ruc, Dansas, Hugo, Gambacorti, Narciso, Mashanovich, Goran Z., Gardes, Frederic Y.

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Mechanism involved in direct hydrophobic Si(100)-2×1:H bonding by Rauer, C., Moriceau, H., Rieutord, F., Hartmann, J. M., Fournel, F., Charvet, A. M., Bernier, N., Rochat, N., Dansas, H., Mariolle, D., Morales, C.

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Mechanism involved in direct hydrophobic Si(100)-2x1:H bonding by Rauer, C., Moriceau, Hubert, Rieutord, François, Hartmann, Jean-Michel, Fournel, Frank, Charvet, A. M., Bernier, Nicolas, Rochat, N., Dansas, H., Mariolle, Denis, Morales, Christophe

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New insights on bottom layer thermal stability and laser annealing promises for high performance 3D VLSI by Fenouillet-Beranger, C., Mathieu, B., Previtali, B., Samson, M.-P, Rambal, N., Benevent, V., Kerdiles, S., Barnes, J.-P, Barge, D., Besson, P., Kachtouli, R., Casse, M., Garros, X., Laurent, A., Nemouchi, F., Huet, K., Toque-Tresonne, I., Lafond, D., Dansas, H., Aussenac, F., Druais, G., Perreau, P., Richard, E., Chhun, S., Petitprez, E., Guillot, N., Deprat, F., Pasini, L., Brunet, L., Lu, V., Reita, C., Batude, P., Vinet, M.

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Resistance switching in HfO sub(2-based OxRRAM devices) by Calka, P, Martinez, E, Lafond, D, Dansas, H, Tirano, S, Jousseaume, V, Bertin, F, Guedj, C

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Resistance switching in HfO 2-based OxRRAM devices by Calka, P., Martinez, E., Lafond, D., Dansas, H., Tirano, S., Jousseaume, V., Bertin, F., Guedj, C.

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FDSOI bottom MOSFETs stability versus top transistor thermal budget featuring 3D monolithic integration by Fenouillet-Beranger, C., Previtali, B., Batude, P., Nemouchi, F., Casse, M., Garros, X., Tosti, L., Rambal, N., Lafond, D., Dansas, H., Pasini, L., Brunet, L., Deprat, F., Gregoire, M., Mellier, M., Vinet, M.

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Guidelines for intermediate back end of line (BEOL) for 3D sequential integration by Fenouillet-Beranger, C., Beaurepaire, S., Deprat, F., de Sousa, A. Ayres, Brunet, L., Batude, P., Rozeau, O., Andrieu, F., Besombes, P., Samson, M.-P, Previtali, B., Nemouchi, F., Rodriguez, G., Rodriguez, P., Famulok, R., Rambal, N., Balan, V., Saghi, Z., Jousseaume, V., Guerin, C., Ibars, F., Proud, F., Nouguier, D., Ney, D., Delaye, V., Dansas, H., Federspiel, X., Vinet, M.

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In-depth study of strained SGOI nMOSFETs down to 30nm gate length by Andrieu, F., Ernst, T., Faynot, O., Rozeau, O., Bogumilowicz, Y., Hartmann, J.-M., Brevard, L., Toffoli, A., Lafond, D., Dansas, H., Ghyselen, B., Fournel, F., Ghibaudo, G., Deleonibus, S.

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A novel locally engineered (111) V-channel pMOSFET architecture with improved drivability characteristics for low-standby power (LSTP) CMOS applications by Weber, O., Scheiblin, P., Ritzenthaler, R., Ernst, T., Andrieu, F., Ducroquet, F., Damlencourt, J.-F., Le Tiec, Y., Papon, A.-M., Dansas, H., Brevard, L., Toffoli, A., Guillaumot, B., Deleonibus, S.

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Ultra-thin buried nitride integration for multi-VT, low-variability and power management in planar FDSOI CMOSFETs by Nguyen, P., Andrieu, F., Garros, X., Widiez, J., Molas, G., Tisseur, R., Weber, O., Toffoli, A., Allain, F., Lafond, D., Dansas, H., Tabone, C., Brevard, L., Dechamp, J., Guiot, E., Faynot, O.

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Layered HfSiON-based tunnel stacks for voltage reduction and improved reliability in TANOS memories by Molas, G, Bocquet, M, Colonna, J P, Vidal, V, Kies, R, Grampeix, H, Martin, F, Papon, A M, Dansas, H, Brianceau, P, Licitra, C, Barnes, J P, Pananakakis, G, Ghibaudo, G, De Salvo, B

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25nm Short and Narrow Strained FDSOI with TiN/HfO2 Gate Stack by Deleonibus, S., Mazure, C., Gaud, P., Grampeix, H., Colonna, J.P., Previtali, B., Dansas, H., Lafond, D., Jahan, C., Fenouillet-Beranger, C., Ernst, T., Denorme, S., Vandooren, A., Cluzel, J., Barbe, J.C., Allain, F., Brevard, L., Cayrefoureq, I., Ghyselen, B., Casse, M., Rouchouze, E., Buj, C., Tosti, L., Faynot, O., Rochette, F., Dupre, C., Andrieu, F.

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Impact of Mobility Boosters (XsSOI, CESL, TiN gate) on the Performance of or oriented FDSOI cMOSFETs for the 32nm Node by Andrieu, F., Aussenac, F., Feruglio, S., Eymery, J., Akatsu, T., Maury, P., Brevard, L., Tosti, L., Dansas, H., Rouchouze, E., Hartmann, J.-M., Faynot, O., Vandroux, L., Casse, M., Boeuf, F., Fenouillet-Beranger, C., Brunier, F., Cayrefourcq, I., Mazure, C., Ghibaudo, G., Deleonibus, S., Rochette, F., Barbe, J.-C., Buj, C., Bogumilowicz, Y., Allain, F., Delaye, V., Lafond, D.

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spl Omega/FETs transistors with TiN metal gate and HfO/sub 2/ down to 10nm by Jahan, C., Faynot, O., Casse, M., Ritzenthaler, R., Brevard, L., Tosti, L., Garros, X., Vizioz, C., Allain, F., Papon, A.M., Dansas, H., Martin, F., Vinet, M., Guillaumot, B., Toffoli, A., Giffard, B., Deleonibus, S.

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