Photoluminescence of ultrasmall Ge quantum dots grown by molecular-beam epitaxy at low temperatures by Dashiell, M. W., Denker, U., Müller, C., Costantini, G., Manzano, C., Kern, K., Schmidt, O. G.

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Photoluminescence investigation of phononless radiative recombination and thermal-stability of germanium hut clusters on silicon(001) by Dashiell, M. W., Denker, U., Schmidt, O. G.

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Triple-axis X-ray reciprocal space mapping of InyGa1-yAs thermophotovoltaic diodes grown on (100) InP substrates by DASHIELL, M. W, EHSANI, H, SANDER, P. C, NEWMAN, F. D, WANG, C. A, SHELLENBARGER, Z. A, DONETSKI, D, GU, N, ANIKEEV, S

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Room temperature operation of epitaxially grown Si/Si0.5Ge0.5/Si resonant interband tunneling diodes by Rommel, Sean L., Dillon, Thomas E., Dashiell, M. W., Feng, H., Kolodzey, J., Berger, Paul R., Thompson, Phillip E., Hobart, Karl D., Lake, Roger, Seabaugh, Alan C., Klimeck, Gerhard, Blanks, Daniel K.

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Carbon incorporation in Si1−yCy alloys grown by molecular beam epitaxy using a single silicon–graphite source by Dashiell, M. W., Kulik, L. V., Hits, D., Kolodzey, J., Watson, G.

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Microwave properties of silicon junction tunnel diodes grown by molecular beam epitaxy by Dashiell, M.W., Kolodzey, J., Crozat, P., Aniel, F., Lourtioz, J.M.

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The effect of composition on the thermal stability of Si1−x−yGexCy/Si heterostructures by Kulik, L. V., Hits, D. A., Dashiell, M. W., Kolodzey, J.

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Trenches around and between self assembled silicon/germanium islands grown on silicon substrates investigated by atomic force microscopy by Denker, U, Dashiell, M.W, Jin-Phillipp, N.Y, Schmidt, O.G

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Low temperature epitaxial growth of germanium islands in active regions of silicon interband tunneling diodes by Dashiell, M.W, Müller, C, Jin-Phillipp, N.Y, Denker, U, Schmidt, O.G, Eberl, K

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Growth and thermal stability of pseudomorphic Ge1−yCy/Ge superlattices on Ge(001) by Duschl, R., Schmidt, O. G., Winter, W., Eberl, K., Dashiell, M. W., Kolodzey, J., Jin-Phillipp, N. Y., Phillipp, F.

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Effect of substrate surface defects and Te dopant concentration on crystalline quality and electrical characteristics of AlGaAsSb epitaxial layers by Ehsani, H., Lewis, N., Nichols, G.J., Danielson, L., Dashiell, M.W., Shellenbarger, Z.A., Wang, C.A.

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Current-voltage characteristics of high current density silicon Esaki diodes grown by molecular beam epitaxy and the influence of thermal annealing by Dashiell, M.W., Troeger, R.T., Rommel, S.L., Adam, T.N., Berger, P.R., Guedj, C., Kolodzey, J., Seabaugh, A.C., Lake, R.

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Pseudomorphic SiC alloys formed by Ge ion implantation by Dashiell, M. W., Xuan, G., Ansorge, E., Zhang, X., Kolodzey, J., DeSalvo, G. C., Gigante, J. R., Malkowski, W. J., Clarke, R. C., Liu, J., Skowronski, M.

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Electrical and optical properties of phosphorus doped Ge1-yCy by DASHIELL, M. W, TROEGER, R. T, ROE, K. J, KHAN, A.-S, ORNER, B, OLOWOLAFE, J. O, BERGER, P. R, WILSON, R. G, KOLODZEY, J

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Influence of layer structure on the current-voltage characteristics of Si∕SiGe interband tunneling diodes by Khorenko, E., Prost, W., Tegude, F.-J., Stoffel, M., Duschl, R., Dashiell, M. W., Schmidt, O. G.

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Precipitation of β-SiC in Si1−yCy alloys by Guedj, C., Dashiell, M. W., Kulik, L., Kolodzey, J., Hairie, A.

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Influence of the Si–Ge interface on phononless radiative recombination in Ge hut clusters grown on Si [formula omitted] by Dashiell, M.W, Denker, U, Schmidt, O.G

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1.3 μm photoresponsivity in Si-based Ge1−xCx photodiodes by Shao, Xiaoping, Rommel, S. L., Orner, B. A., Feng, H., Dashiell, M. W., Troeger, R. T., Kolodzey, J., Berger, Paul R., Laursen, Thomas

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The electrical effects of DNA as the gate electrode of MOS transistors by Dashiell, M.W., Kalambur, A.T., Leeson, R., Roe, K.J., Rabolt, J.F., Kolodzey, J.

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Ge incorporation in SiC and the effects on device performance by Roe, K.J., Dashiell, M.W., Xuan, G., Ansorge, E., Katulka, G., Sustersic, N., Zhang, X., Kolodzey, J.

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