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Highly Reliable, Scalable, and High-Yield HfZrOx FRAM by Barrier Layer Engineering and Post-Metal Annealing
by
Lin, Yu-De
,
Yeh, Po-Chun
,
Dai, Jheng-Yang
,
Su, Jian-Wei
,
Huang, Hsin-Hui
,
Cho, Chen-Yi
,
Tang, Ying-Tsan
,
Hou, Tuo-Hung
,
Sheu, Shyh-Shyuan
,
Lo, Wei-Chung
,
Chang, Shih-Chieh
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Conference Proceeding
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Annealing
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Ferroelectric Films
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