Search Results - Danneville, Franois

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  1. 1
    100 nm AlSb/InAs HEMT for Ultra-Low-Power Consumption, Low-Noise Applications

    100 nm AlSb/InAs HEMT for Ultra-Low-Power Consumption, Low-Noise Applications by Wallart, Xavier, Danneville, François, Bollaert, Sylvain, Wichmann, Nicolas, Desplanque, Ludovic, Bagumako, Sonia, Gardès, Cyrille, Roelens, Yannick

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  2. 2
    Validation of the 2 Temperatures Noise Model Using Pre-Matched Transistors in W-Band for Sub-65 nm Technology

    Validation of the 2 Temperatures Noise Model Using Pre-Matched Transistors in W-Band for Sub-65 nm Technology by Waldhoff, Nicolas, Tagro, Yoann, Gloria, Daniel, Gianesello, Frederic, Danneville, Franois, Dambrine, Gilles

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  3. 3
    Efficient De-Embedding Technique for 110-GHz Deep-Channel-MOSFET Characterization

    Efficient De-Embedding Technique for 110-GHz Deep-Channel-MOSFET Characterization by Andrei, C., Gloria, D., Danneville, F., Dambrine, G.

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  4. 4
    Thermal Noise in MOSFETs: A Two- or a Three-Parameter Noise Model?

    Thermal Noise in MOSFETs: A Two- or a Three-Parameter Noise Model? by Emam, Mostafa, Sakalas, Paulius, Vanhoenacker-Janvier, Danielle, Raskin, Jean-Pierre, Tao Chuan Lim, Danneville, Franois

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  5. 5
    Microscopic Modeling of RF Noise in Laterally Asymmetric Channel MOSFETs

    Microscopic Modeling of RF Noise in Laterally Asymmetric Channel MOSFETs by Rengel, R, Martín, M J, Danneville, F

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  6. 6
    Microscopic noise modeling and macroscopic noise models: how good a connection? [FETs]

    Microscopic noise modeling and macroscopic noise models: how good a connection? [FETs] by Danneville, F., Happy, H., Dambrine, G., Belquin, J.-M., Cappy, A.

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  7. 7
    Benefits and validation of 4-dummies de-embedding method for characterization of SiGe HBT in G-band

    Benefits and validation of 4-dummies de-embedding method for characterization of SiGe HBT in G-band by Deng, Marina, Lepilliet, Sylvie, Danneville, Francois, Dambrine, Gilles, Gloria, Daniel, Derrier, Nicolas, Chevalier, Pascal

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