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Comparing Variation-tolerance and SEU/TID-Resilience of Three SRAM Cells in 28nm FD-SOI Technology: 6T, Quatro, and we-Quatro
by
Trang Dang, Le Dinh
,
Dinh Linh, Trinh
,
Dat, Ngyuen Thanh
,
Min, Changhong
,
Kim, Jinsang
,
Chang, Ik-Joon
,
Han, Jin-woo
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Conference Proceedings
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Engineering
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Engineering, Electrical & Electronic
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Fully Depleted Silicon-On-Insulator
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Gamma Irradiation
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Gamma Rays
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Neutrons
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Radiation Effects
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Reliability
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Resilience
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Science & Technology
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Silicon
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Single Event Upsets
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Single-Event Upset
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Soi
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Sram
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Sram Cells
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Technology
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Thermal Stability
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Total Ionizing Dose
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Variation-Tolerance
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Ieee Electronic Library (Iel) Conference Proceedings
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