Improved compositional uniformity of InGaAsP grown by low pressure metalorganic vapor phase epitaxy using tertiary butyl phosphine as the phosphorus source by Zilko, J.L., Davisson, P.S., Luther, L., Trapp, K.D.C.

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InP substrate temperature measurements in a horizontal, low-pressure metalorganic chemical vapor deposition reactor by infrared laser interferometric thermometry by McCrary, V.R., Donnelly, V.M., Napholtz, S.G., Hayes, T.R., Davisson, P.S., Bruno, D.C.

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High-speed signal switching with a monolithic integrated p-i-n/amp/switch on indium phosphide by Seabury, C.W., Bylsma, R.B., Vella-Coleiro, G.P., Kim, S.J., Davisson, P.S., Yee, C.M.L., Eng, J., Deblis, D., Jeong, J., Jhee, Y.K.

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Comparison of the saturated current in normal and inverted modulation-doped In 0.53 Ga 0.47 As/InP structures by Chan, W.K., Cox, H.M., Hummel, S.G., Davisson, P.S., Leheny, R.F.

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GaAs MESFETs on InP substrates grown using chloride close-proximity reactor system by Jeong, J., Yee, C.M.L., Vella-Coleiro, G.P., Smith, P.R., Chu, S.N.G., Davisson, P.S., Paczkowski, J.P.

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Comparison of the saturated current in normal and inverted modulation-doped In0.53Ga0.47As/InP structures by Chan, W.K., Cox, H.M., Hummel, S.G., Davisson, P.S., Leheny, R.F.

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Improved Compositional Uniformity of lnGaAsP Grown by Low Pressure Metal Organic Vapor Phase Epitaxy Using Tertiary Butyl Phosphine as the Phosphorus Source by Zilko, J.L., Davisson, P.S., Luther, L., Trapp, K.D.C.

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