Acceptor-oxygen defects in silicon: The electronic properties of centers formed by boron, gallium, indium, and aluminum interactions with the oxygen dimer by de Guzman, Joyce Ann T., Markevich, Vladimir P., Hawkins, Ian D., Coutinho, José, Ayedh, Hussein M., Binns, Jeff, Abrosimov, Nikolay V., Lastovskii, Stanislau B., Crowe, Iain F., Halsall, Matthew P., Peaker, Anthony R.

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On the Correlation between Light-Induced Degradation and Minority Carrier Traps in Boron-Doped Czochralski Silicon by Jafari, Saman, Zhu, Yan, Rougieux, Fiacre, De Guzman, Joyce Ann T, Markevich, Vladimir P, Peaker, Anthony R, Hameiri, Ziv

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Kinetics of Bulk Lifetime Degradation in Float‐Zone Silicon: Fast Activation and Annihilation of Grown‐In Defects and the Role of Hydrogen versus Light by Hiller, Daniel, Markevich, Vladimir P., de Guzman, Joyce Ann T., König, Dirk, Prucnal, Slawomir, Bock, Wolfgang, Julin, Jaakko, Peaker, Anthony R., Macdonald, Daniel, Grant, Nicholas E., Murphy, John D.

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Interactions of Hydrogen Atoms with Acceptor–Dioxygen Complexes in Czochralski‐Grown Silicon by Abdul Fattah, Tarek O., Markevich, Vladimir P., De Guzman, Joyce Ann T., Coutinho, José, Lastovskii, Stanislau B., Hawkins, Ian D., Crowe, Iain F., Halsall, Matthew P., Peaker, Anthony R.

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Formation and elimination of electrically active thermally- induced defects in float-zone-grown silicon crystals by Guzman, Joyce Ann T. De, Markevich, Vladimir P., Mullins, Jack, Grant, Nicholas, Murphy, John D., Hiller, Daniel, Halsall, Matthew P., Peaker, Anthony R.

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Indium‐Doped Silicon for Solar Cells—Light‐Induced Degradation and Deep‐Level Traps by De Guzman, Joyce Ann T., Markevich, Vladimir P., Hawkins, Ian D., Ayedh, Hussein M., Coutinho, José, Binns, Jeff, Falster, Robert, Abrosimov, Nikolay V., Crowe, Iain F., Halsall, Matthew P., Peaker, Anthony R.

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Electrical Characterization of Thermally Activated Defects in n-Type Float-Zone Silicon by Zhu, Yan, Rougieux, Fiacre, Grant, Nicholas E., De Guzman, Joyce Ann T., Murphy, John D., Markevich, Vladimir P., Coletti, Gianluca, Peaker, Anthony R., Hameiri, Ziv

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Electronic Properties and Structure of Boron–Hydrogen Complexes in Crystalline Silicon by De Guzman, Joyce Ann T., Markevich, Vladimir P., Coutinho, José, Abrosimov, Nikolay V., Halsall, Matthew P., Peaker, Anthony R.

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Deep-level defects in Ga-doped silicon crystals by Fattah, Tarek O. Abdul, Markevich, Vladimir P., De Guzman, Joyce Ann, Coutinho, José, Abrosimov, Nikolay V., Binns, Jeff, Crowe, Iain, Halsall, Matthew P., Peaker, Anthony R.

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New insights into the thermally activated defects in n-type float-zone silicon by Zhu, Yan, Rougieux, Fiacre, Grant, Nicholas, Mullins, Jack, De Guzman, Joyce Ann, Murphy, John D., Markevich, Vladimir P., Coletti, Gianluca, Peaker, Anthony R., Hameiri, Ziv

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Explicating Physical Activity Preferences of Community-Dwelling Filipino Elderly in Urban and Rural Settings: A Conjoint Analysis by de Guzman, Allan B., Jatulan, Eric Harold M., Jimenez, Joyce Ann Camille A.

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Ego Integrity of Older People with Physical Disability and Therapeutic Recreation by de Guzman, Allan B., Shim, Hye-Eun, Sia, Charmin Kathleen M., Siazon, Wilbart Harvey S., Sibal, Mary Joyce Ann P., Siglos, Joanna Brigitte Lorraine C., Simeon, Francis Marlo C.

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