Search Results - De Tommasis, R.

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  1. 1
    Properties of stacked dielectric films composed of SiO2/Si3N4/SiO2

    Properties of stacked dielectric films composed of SiO2/Si3N4/SiO2 by SANTUCCI, S, LOZZI, L, PASSACANTANDO, M, PHANI, A. R, PALUMBO, E, BRACCHITTA, G, DE TOMMASIS, R, TORSI, A, ALFONSETTI, R, MOCCIA, G

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  2. 2
    Scanning capacitance microscope, an alternative technique to the C- V measurement for the SiO 2 characterisation

    Scanning capacitance microscope, an alternative technique to the C- V measurement for the SiO 2 characterisation by Bordoni, F., Fasciani, L., De Tommasis, R., Di Giacomo, A., Moccia, G.

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  3. 3
    Properties of stacked dielectric films composed of SiO 2/Si 3N 4/SiO 2

    Properties of stacked dielectric films composed of SiO 2/Si 3N 4/SiO 2 by Santucci, S., Lozzi, L., Passacantando, M., Phani, A.R., Palumbo, E., Bracchitta, G., De Tommasis, R., Torsi, A., Alfonsetti, R., Moccia, G.

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  4. 4
    Scanning capacitance microscope, an alternative technique to the C-V measurement for the SiO2 characterisation

    Scanning capacitance microscope, an alternative technique to the C-V measurement for the SiO2 characterisation by Bordoni, F., Fasciani, L., De Tommasis, R., Di Giacomo, A., Moccia, G.

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