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High-power V-band AlInAs/GaInAs on InP HEMTs
by
Matloubian, M.
,
Brown, A.S.
,
Nguyen, L.D.
,
Melendes, M.A.
,
Larson, L.E.
,
Delancey, M.J.
,
Pence, J.E.
,
Rhodes, R.A.
,
Thompson, M.A.
,
Henige, J.A.
Published in
IEEE electron device letters
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Ieee Electron Device Letters
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426000 - Engineering- Components, Electron Devices & Circuits-
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Aluminium Arsenides
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Gallium Arsenide
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