Explanation of low efficiency droop in semipolar (202¯1¯) InGaN/GaN LEDs through evaluation of carrier recombination coefficients by Monavarian, Morteza, Rashidi, Arman, Aragon, Andrew, Oh, Sang H, Nami, Mohsen, DenBaars, Steve P, Feezell, Daniel

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Internal quantum efficiency and carrier dynamics in semipolar (20 21 ) InGaN/GaN light-emitting diodes by Okur, Serdal, Nami, Mohsen, Rishinaramangalam, Ashwin K, Oh, Sang H, DenBaars, Steve P, Liu, Sheng, Brener, Igal, Feezell, Daniel F

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Ultraviolet light emitting diodes by ammonia molecular beam epitaxy on metamorphic (202¯1) AlGaN/GaN buffer layers by Young, Erin C., Yonkee, Benjamin P., Wu, Feng, Saifaddin, Burhan K., Cohen, Daniel A., DenBaars, Steve P., Nakamura, Shuji, Speck, James S.

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Basal plane misfit dislocations and stress relaxation in III-nitride semipolar heteroepitaxy by Romanov, Alexey E., Young, Erin C., Wu, Feng, Tyagi, Anurag, Gallinat, Chad S., Nakamura, Shuji, DenBaars, Steve P., Speck, James S.

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Formation of InGaAs fins by atomic layer epitaxy on InP sidewalls by Elias, Doron Cohen, Sivananthan, Abirami, Zhang, Chong, Keller, Stacia, Chiang, Han-Wei, Law, Jeremy J. M., Thibeault, Brain J., Mitchell, William J., Lee, Sanghoon, Carter, Andy D., Huang, Cheng-Ying, Chobpattana, Varistha, Stemmer, Susanne, Denbaars, Steve P., Coldren, Larry A., Rodwell, Mark J. W.

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Internal quantum efficiency and carrier dynamics in semipolar (20 21 ) InGaN/GaN light-emitting diodes by Okur, Serdal, Nami, Mohsen, Rishinaramangalam, Ashwin K., Oh, Sang H., DenBaars, Steve P., Liu, Sheng, Brener, Igal, Feezell, Daniel F.

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High light extraction efficiency light-emitting diodes grown on bulk GaN and sapphire substrates using vertical transparent package by Chih-Chien Pan, Nakamura, S., Den Baars, Steve P.

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Explanation of low efficiency droop in semipolar \((20\bar 2\bar 1)\) InGaN/GaN LEDs through evaluation of carrier recombination coefficients by Monavarian, Morteza, Rashidi, Arman, Aragon, Andrew A, Oh, Sang H, Nami, Mohsen, DenBaars, Steve P, Feezell, Daniel F

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High-speed p+ GaInAs-n InP heterojunction JFET's (HJFET's) grown by MOCVD by HASHEMI, M. M, SHEALY, J. B, DENBAARS, S. P, MISHRA, U. K

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Epitaxial Growth and Fabrication of Highly Strained Heterostructures by DenBaars, Steve P

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N-polar GaN Electronics by Rajan, S., Hsieh, E., Man Hoi Wong, Keller, S., DenBaars, S.P., Speck, J.S., Mishra, U.K.

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Optical analysis of III-nitride micro-light-emitting diodes with different sidewall treatments at low current density operation by Wong, Matthew S., Gee, Stephen, Tak, Tanay, Gandrothula, Srinivas, Rebollo, Steve, Cha, NamGoo, Speck, James S., DenBaars, Steven P.

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