Search Results - Derenge, M.A.

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  1. 1
    Growth of GaN films on PLD-deposited TaC substrates

    Growth of GaN films on PLD-deposited TaC substrates by Kirchner, K.W., Derenge, M.A., Zheleva, T.S., Vispute, R.D., Jones, K.A.

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  2. 2
    Structural and Chemical Comparison of Graphite and BN/AlN Caps Used for Annealing Ion Implanted SiC

    Structural and Chemical Comparison of Graphite and BN/AlN Caps Used for Annealing Ion Implanted SiC by Jones, K.A., Wood, M.C., Zheleva, T.S., Kirchner, K.W., Derenge, M.A., Bolonikov, A., Sudarshan, T.S., Vispute, R.D., Hullavarad, S.S., Dhar, S.

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  3. 3
    A comparison of the AlN annealing cap for 4H–SiC annealed in nitrogen versus argon atmosphere

    A comparison of the AlN annealing cap for 4H–SiC annealed in nitrogen versus argon atmosphere by Derenge, M.A., Jones, K.A., Kirchner, K.W., Ervin, M.H., Zheleva, T.S., Hullavarad, S., Vispute, R.D.

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  4. 4
    Electrical, microstructural, and thermal stability characteristicsof Ta/Ti/Ni/Au contacts to n-GaN

    Electrical, microstructural, and thermal stability characteristicsof Ta/Ti/Ni/Au contacts to n-GaN by Motayed, A., Jones, K.A., Derenge, M.A., Wood, M.C., Zakharov,D.N., Liliental-Weber, Z., Smith, M.C., Davydov, A.V., Anderson, W.T., Iliadis, A.A., Mohammad, S.N.

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  5. 5
    Graphene containing conductive inks for electrical contacts to power semiconductor devices

    Graphene containing conductive inks for electrical contacts to power semiconductor devices by Shah, P.B., Lettow, J., Nyguen, C., Derenge, M.A., Jones, K.A., Batyrev, I., Piekarski, B.

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  6. 6
    Implant activation in GaN Using an AlN cap

    Implant activation in GaN Using an AlN cap by Hager, C., Jones, K.A., Derenge, M.A., Ewing, D.J., Zheleva, T.S.

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  7. 7
    A comparison of the AlN annealing cap for 4H SiC annealed in a nitrogen versus an argon atmosphere

    A comparison of the AlN annealing cap for 4H SiC annealed in a nitrogen versus an argon atmosphere by Derenge, M.A., Jones, K.A., Kirchner, K., Ervin, M.

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  8. 8
    The Effects of Implanting Al and Al and C at Different Temperatures in Different Concentrations into SiC

    The Effects of Implanting Al and Al and C at Different Temperatures in Different Concentrations into SiC by Stepp, D., Jones, K.A., Zheleva, T.S., Derenge, M.A., Vispute, R.D., Hullavarad, S., Dar, S.

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