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Search Results - Dixit, Shivendra K.
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Unlocking the enigma of phenotypic drug tolerance: Mechanisms and emerging therapeutic strategies
by
Mishra, Alok K.
,
Thakare, Ritesh P.
,
Santani, Bela G.
,
Yabaji, Shivraj M.
,
Dixit, Shivendra K.
,
Srivastava, Kishore K.
Published in
Biochimie
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Impact of temperature on threshold voltage instability under negative bias in ferroelectric charge trap (FEG) GaN-HEMT
by
Rathaur, Shivendra K.
,
Dixit, Abhisek
,
Chang, Edward Yi
Published in
Applied physics letters
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Reliability assessment of high-power GaN-HEMT devices with different buffers under influence of gate bias and high-temperature tests
by
Rathaur, Shivendra K.
,
Hieu, Le Trung
,
Dixit, Abhisek
,
Chang, Edward Yi
Published in
Applied physics express
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High-Temperature TDDB Investigation on High Performance-Centered Hybrid HZO/HfON/Al2O3, Ferro-Electric Charge-Trap (FEG) GaN-HEMT
by
Rathaur, Shivendra K.
,
Wu, Jui-Sheng
,
Yang, Tsung-Ying
,
Amin, Asifa
,
Dixit, Abhisek
,
Chang, Edward Yi
Published in
IEEE transactions on electron devices
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High-Temperature TDDB Investigation on High Performance-Centered Hybrid HZO/HfON/Al 2 O 3 , Ferro-Electric Charge-Trap (FEG) GaN-HEMT
by
Rathaur, Shivendra K.
,
Wu, Jui-Sheng
,
Yang, Tsung-Ying
,
Amin, Asifa
,
Dixit, Abhisek
,
Chang, Edward Yi
Published in
IEEE transactions on electron devices
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Investigation on Positive Bias-Induced Threshold Voltage Instability in GaN-on-Si D-mode Power MIS-HEMTs
by
Rathaur, Shivendra K.
,
Dixit, Abhisek
,
Chang, Edward Yi
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Conference Proceeding
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Performance and Threshold Voltage Reliability of Quaternary InAlGaN/GaN MIS-HEMT on Si for Power Device Applications
by
Rathaur, Shivendra K.
,
Ma, Cheng-Jun
,
Dixit, Abhisek
,
Lee, Ching-Ting
,
Chang, Edward Yi
Published in
IEEE transactions on device and materials reliability
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Investigation on Traps Dynamics & Negative Bias Stress in D-Mode GaN-on-Si Power MIS HEMTs Under High-Temperature
by
Rathaur, Shivendra K.
,
Hieu, Le Trung
,
Yang, Tsung-Ying
,
Tsai, Shang Hua
,
Lin, Wen Yu
,
Dixit, Abhisek
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Chang, Edward Yi
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IEEE transactions on device and materials reliability
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