Mounting-induced strain threshold for the degradation of high-power AlGaAs laser bars by Xia, R., Larkins, E.C., Harrison, I., Dods, S.R.A., Andrianov, A., Morgan, J., Landesman, J.P.

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The effect of mounting-induced strain and defect on the properties of AlGaAs 808 nm LDs by Xia, R, Larkins, E.C, Harrison, I, Dods, S.R.A, Andrianov, A.V, Morgan, J, Landesman, J.P

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Spatial inhomogeneity investigation of QW emission in InGaN MQW LEDs by Xia, R, Harrison, I, Larkins, E.C, Andrianov, A.V, Dods, S.R.A, Morgan, J, Parbrook, P.J, Button, C.C, Hill, G

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Small-signal analysis of semiconductor lasers modulated at frequencies on the order of the beat frequency by Dods, S.R.A., Ogura, M., Watanabe, M.

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Examples of reconstruction of vibrating rods from spectral data by Gladwell, G.M.L., Dods, S.R.A.

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A Highly Integrated System for Fast, Flexible and Comprehensive Characterisation of Semiconductor Lasers by Larkins, E.C., Dods, S.R.A., Andrianov, A.V., Morgan, J., Harrison, I., Benson, T.M., Orton, J.W.

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Photoluminescence microscopy of mirror facets of broad area laser diodes by Andrianov, A.V., Dods, S.R.A., Morgan, J., Orton, J.W., Harrison, I., Larkins, E.C., Daiminger, F.X., Vassilakis, E., Hirtz, J.P.

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Low frequency electrical noise characteristics of broad area 808 nm semiconductor laser diodes by Morgan, J., Harrison, I., Dods, S.R.A., Andrianov, A.V., Orton, J.W., Larkins, E.C., Nagle, J., Asonen, H., Nappi, J., Esquivias, I., Arias, J.

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Nonuniform transmission-line synthesis using inverse eigenvalue analysis by Gladwell, G.M.L., Dods, S.R.A., Chaudhuri, S.K.

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