Search Results - Doney, T.L.

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  1. 1
    A simple and high-performance 130 nm SOI eDRAM technology using floating-body pass-gate transistor in trench-capacitor cell for system-on-a-chip (SoC) applications

    A simple and high-performance 130 nm SOI eDRAM technology using floating-body pass-gate transistor in trench-capacitor cell for system-on-a-chip (SoC) applications by Kumar, M., Steigerwalt, M.D., Walsh, B.L., Doney, T.L., Wildrick, D., Bard, K.A., Dobuzinsky, D.M., McFarland, P.A., Schiller, C.E., Messenger, B., Rathmill, S.E., Gasasira, A.R., Parries, P.C., Iyer, S.S., Chaloux, S.E., Ho, H.L.

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    A 0.13 /spl mu/m high-performance SOI logic technology with embedded DRAM for system-on-a-chip application

    A 0.13 /spl mu/m high-performance SOI logic technology with embedded DRAM for system-on-a-chip application by Ho, H.L., Steigerwalt, M.D., Walsh, B.L., Doney, T.L., Wildrick, D., McFarland, P.A., Benedict, J., Bard, K.A., Pendleton, D., Lee, J.D., Maurer, S.L., Corrow, B., Sadana, D.K.

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