Search Results - Donlon, John F.

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  1. 1
    New high efficiency transfer mold module with parallel IGBT and Super Junction MOSFET

    New high efficiency transfer mold module with parallel IGBT and Super Junction MOSFET by Donlon, John F., Motto, Eric R., Kato, Masahiro, Shiramizu, Masataka, Tanaka, Tomofumi

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  2. 2
    A Real-Time Thermal Model for Monitoring of Power Semiconductor Devices

    A Real-Time Thermal Model for Monitoring of Power Semiconductor Devices by Gachovska, Tanya Kirilova, Bo Tian, Hudgins, Jerry L., Wei Qiao, Donlon, John F.

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  3. 3
    IGBT module with user accessible on-chip current and temperature sensors

    IGBT module with user accessible on-chip current and temperature sensors by Motto, E. R., Donlon, J. F.

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  4. 4
    A new current-source converter using a symmetric gate-commutated thyristor (SGCT)

    A new current-source converter using a symmetric gate-commutated thyristor (SGCT) by Zargari, N.R., Rizzo, S.C., Xiao, Y., Iwamoto, H., Satoh, K., Donlon, J.F.

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  5. 5
    A new intelligent power module with enhanced diagnostics and protection

    A new intelligent power module with enhanced diagnostics and protection by Motto, E. R., Donlon, J. F., Honsberg, M., Tametani, F.

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  6. 6
    IGBT modules optimized for three level inverters

    IGBT modules optimized for three level inverters by Motto, Eric R, Donlon, John F

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  7. 7
    New process technologies improve IGBT module efficiency

    New process technologies improve IGBT module efficiency by Motto, E.R., Donlon, J.F., Mori, S., Iida, T.

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  8. 8
    A new IGBT module for megawatt class 380VAC to 690VAC grid tie inverters

    A new IGBT module for megawatt class 380VAC to 690VAC grid tie inverters by Motto, E R, Donlon, J F

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  9. 9
    6.5kV IGBTs with improved Long Term DC Stability (LTDS)

    6.5kV IGBTs with improved Long Term DC Stability (LTDS) by Donlon, J. F., Motto, E. R., Uemura, H., Iura, S., Nakamura, K., Minho Kim, Stumpf, E.

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  10. 10
    CSTBT™(III) having wide SOA under high temperature condition

    CSTBT™(III) having wide SOA under high temperature condition by Fukada, Y., Suzuki, K., Takahashi, T., Harada, T., Fujii, H., Ishizawa, S., Yamashita, J., Donlon, J. F., Terashima, T.

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  11. 11
    New 1.7kV IGBT chip with fine pattern and optimized buffer layer

    New 1.7kV IGBT chip with fine pattern and optimized buffer layer by Donlon, J.F., Motto, E.R., Satoh, K., Suzuki, K., Yoshihiura, Y., Takahashi, T.

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  12. 12
    A new punch-through IGBT having a new n-buffer layer

    A new punch-through IGBT having a new n-buffer layer by Iwamoto, H., Haruguchi, H., Tomomatsu, Y., Donlon, J.F., Motto, E.R.

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  13. 13
    Chip Improvements for Future IGBT Modules

    Chip Improvements for Future IGBT Modules by Donlon, J.F., Motto, E.R., Takahashi, T., Fujii, H., Satoh, K.

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  14. 14
    New, improved self-protected Intelligent Power Modules with increased efficiency for 10-100kW applications

    New, improved self-protected Intelligent Power Modules with increased efficiency for 10-100kW applications by Donlon, J F, Motto, E R, Honsberg, M, Radke, T, Nobuya, N, Shiori, U, Rei, Y, Fumitaka, T, Shoichi, O

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  15. 15
    Design and Development of New Robust 3.3kV IGBT and FWD Module Chips

    Design and Development of New Robust 3.3kV IGBT and FWD Module Chips by Donlon, J.F., Motto, E.R., Iura, S.

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  16. 16
    Optimizing 1200V IGBT Modules for High Frequency Applications

    Optimizing 1200V IGBT Modules for High Frequency Applications by Motto, Eric R., Donlon, John F., Nagashima, Yoshikatsu

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  17. 17
    Effect of pulse width on dynamic characteristics of high voltage IGBTs

    Effect of pulse width on dynamic characteristics of high voltage IGBTs by Donlon, John F., Motto, Eric R., Wiesner, Eugen, Stumpf, Eugen, Iura, Shinichi, Uemura, Hitoshi

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  18. 18
    Next generation industrial IGBT module

    Next generation industrial IGBT module by Motto, Eric R., Donlon, John F., Miyazawa, Masaomi, Tabata, Mitsuharu, Muraoka, Hiroki, Hieda, Tomohiro, Radke, Thomas

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  19. 19
    Characteristics of a 1200 V PT IGBT with trench gate and local life time control

    Characteristics of a 1200 V PT IGBT with trench gate and local life time control by Motto, E.R., Donlon, J.F., Takahashi, H., Tabata, M., Iwamoto, H.

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  20. 20
    Low turn-off switching energy 1200 V IGBT module

    Low turn-off switching energy 1200 V IGBT module by Yamada, J., Yu, Y., Ishimura, Y., Donlon, J.F., Motto, E.R.

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