Characterization technique for inhomogeneous 4H-SiC Schottky contacts: A practical model for high temperature behavior by Brezeanu, G., Pristavu, G., Draghici, F., Badila, M., Pascu, R.

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Characterization of non-uniform Ni/4H-SiC Schottky diodes for improved responsivity in high-temperature sensing by Pristavu, G., Brezeanu, G., Pascu, R., Drăghici, F., Bădilă, M.

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On the assessment of performance and emissions characteristics of a SI engine provided with a laser ignition system by Birtas, A., Boicea, N., Draghici, F., Chiriac, R., Croitoru, G., Dinca, M., Dascalu, T., Pavel, N.

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An industrial temperature probe based on SiC diodes by Draghici, F, Badila, M, Brezeanu, G, Rusu, I, Craciunoiu, F, Enache, I

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Beyond the Boundaries of State-of-the-Art Power Semiconductor Devices by Sdrulla, D.G., Gendron, A., Barr, N., Held, M., Chen, S.W., Gu, A. W., Brezeanu, G., Pristavu, G., Draghici, F., Pascu, R.

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Two parameter extraction solutions for high temperature SiC Schottky diodes - Converging to reality by Pristavu, Gh, Brezeanu, Gh, Draghici, F.

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4H-SiC Schottky contact improvement for temperature sensor applications by Draghici, F., Badila, M., Brezeanu, G., Pristavu, G., Rusu, I., Craciunoiu, F., Pascu, R.

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High temperature characterization system for silicon carbide devices by Teodorescu, L., Draghici, F., Brezeanu, G., Rusu, I.

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The effect of the post-metallization annealing of Ni/n-type 4H-SiC SCHOTTKY contact by Pascu, R., Craciunoiu, F., Kusko, M., Draghici, F., Dinescu, A., Danila, M.

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High temperature sensor based on SiC Schottky diodes with undoped oxide ramp termination by Pascu, R., Draghici, F., Badila, M., Craciunoiu, F., Brezeanu, G., Dinescu, A., Rusu, I.

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An accurate method for measuring very low frequency biosignals by Draghici, F., Rusu, I., Brezeanu, G., Bucur, B.

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Experimental Validation of a Simple Analytical Model for the Electrical Behaviour of Nanoscale MOSFETs by Sevcenco, A., Brezeanu, G., Badila, M., Draghici, F., Rusu, I., Visoreanu, A.

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Complete analytical submicron MOS transistor model for analogue applications by Brezeanu, G., Sevcenco, A., Boianceanu, C., Rusu, I., Draghici, F.

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Off - State Performances of Ideal Schottky Barrier Diodes (SBD) on Diamond and Silicon Carbide by Brezeanu, G., Visoreanu, A., Brezeanu, M., Udrea, F., Amaratunga, G.A.J., Enache, I., Rusu, I., Draghici, F.

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A system to measure reverse recovery time and stored charge at ultrafast power diodes by Draghici, F., Jorda, X., Brezeanu, G., Badila, M., Millan, J., Godignon, P.

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Method to increase the thermal stability of the heating circuits by Draghici, F., Mitu, F., Dilimot, G., Enache, I.

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Memory management unit-a new principle for LRU implementation by Stefan, G., Draghici, F.

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SiC power Schottky diodes: industrial development by Badila, M., Brezeanu, G., Banu, V., Godignon, P., Millan, J., Jorda, X., Draghici, F.

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A characterization technique of high power/temperature devices using HP4275/3437 systems by Mitu, F., Draghici, F., Dilimot, G., Amitroaie, C., Vladan, I., Enache, I.

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Breakdown performances improvements of SiC diodes using high-k dielectrics by Brezeanu, G., Badila, M., Brezeanu, M., Udrea, F., Boianceanu, C., Enache, I., Draghici, F., Visioreanu, A.

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