Characterization of AlGaInN diode lasers with mirrors from chemically assisted ion beam etching by Kneissl, M., Bour, D. P., Johnson, N. M., Romano, L. T., Krusor, B. S., Donaldson, R., Walker, J., Dunnrowicz, C.

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Indium tin oxide transparent electrodes for broad-area top-emitting vertical-cavity lasers fabricated using a single lithography step by Chua, C.L., Thornton, R.L., Treat, D.W., Yang, V.K., Dunnrowicz, C.C.

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Stripe-width dependence of threshold current for gain-guided AlGaInN laser diodes by Bour, D. P., Kneissl, M., Romano, L. T., Donaldson, R. M., Dunnrowicz, C. J., Johnson, N. M., Evans, G. A.

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Low-threshold InAlGaAs vertical-cavity surface-emitting laser arrays using transparent contacts by Chua, C. L., Thornton, R. L., Treat, D. W., Kneissl, M., Dunnrowicz, C.

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Multiwavelength light emitters for scanning applications fabricated by flipchip bonding by Hofstetter, D., Sun, D., Dunnrowicz, C., Kneissl, M., Treat, D.W.

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Characteristics of InGaN-AlGaN multiple-quantum-well laser diodes by Bour, D.P., Kneissl, M., Romano, L.T., McCluskey, M.D., Van deWalle, C.G., Krusor, B.S., Donaldson, R.M., Walker, J., Dunnrowicz, C.J., Johnson, N.M.

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High efficiency 28V class AB InGaP/GaAs HBT MMIC amplifier with integrated bias circuit by Wang, N.L., Dunnrowicz, C., Chen, X., Ma, W., Chau, H.F., Sun, X., Chen, Y., Lin, B., Lo, I.L., Huang, C.H., Yang, M.H.T.

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MOCVD growth and characterization of AlGaInN multiple quantum well heterostructures and laser diodes by Bour, D.P, Kneissl, M, Hofstetter, D, Romano, L.T, McCluskey, M, Van de Walle, C.G, Krusor, B.S, Dunnrowicz, C, Donaldson, R, Walker, J, Johnson, N.M

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Demonstration of an InGaN/GaN-based optically pumped multiquantum well distributed feedback laser using holographically defined third-order gratings by Hofstetter, Daniel, Thornton, Robert L., Kneissl, Michael, Bour, David P., Dunnrowicz, Clarence

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Linearity improvement of multi-Watts 24-28 V InGaP/GaAs HBT by low frequency low source impedance matching by Wang, N.L., Ma, W., Chen, X., Sun, X., Chau, H.F., Dunnrowicz, C., Chen, Y., Lin, B., Lo, I.L., Huang, C.H., Yang, M.H.T.

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Characterization of InGaN/GaN-Based Multi-Quantum Well Distributed Feedback Lasers by Hofstetter, Daniel, Thornton, Robert L., Romano, Linda T., Bour, David P., Kneissl, Michael, Donaldson, Rose M., Dunnrowicz, Clarence

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Flip-chip bonding on 6- mu m pitch using thin-film microspring technology by Smith, Donald L, k, David K, Thornton, Robert L, Alimonda, Andrew S, Chua, Christopher L, Dunnrowicz, Clarence, Ho, Jackson

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Surface Wave Narrow Band Resonators by Sandy,F, Dunnrowicz,C

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Linearity improvement of multi-watts 24-28V InGaP/GaAs HBT by low frequency low source impedance matching by WANG, N. L, MA, W, YANG, M. H. T, CHEN, X, SUN, X, CHAU, H. F, DUNNROWICZ, C, CHEN, Y, LIN, B, LO, I. L, HUANG, C. H

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Characterization of gain- and index-guided InGaN multiple quantum well laser diodes by Kneissl, M., Bour, D.P., Romano, L.T., Hofstetter, D., McCluskey, M.D., Donaldson, R., Dunnrowicz, C., Johnson, N.M.

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Flip-chip bonding on 6-/spl mu/m pitch using thin-film microspring technology by Smith, D.L., Fork, D.K., Thornton, R.L., Alimonda, A.S., Chua, C.L., Dunnrowicz, C., Ho, J.

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