Analysis and design of negative impedance LC oscillators using bipolar transistors by Zhan, J.-H.C., Maurice, K., Duster, J., Kornegay, K.T.

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A 25-GHz emitter degenerated LC VCO by Jing-Hong Conan Zhan, Duster, J.S., Kornegay, K.T.

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Improved independent gate N-type FinFET fabrication and characterization by Fried, D.M., Duster, J.S., Kornegay, K.T.

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High-performance p-type independent-gate FinFETs by Fried, D.M., Duster, J.S., Kornegay, K.T.

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A nonvolatile semiconductor memory device in 6H-SiC for harsh environment applications by Ce Li, Duster, J.S., Kornegay, K.T.

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A 32 nm SoC With Dual Core ATOM Processor and RF WiFi Transceiver by Lakdawala, H., Schaecher, M., Fu, C., Limaye, R., Duster, J., Tan, Y., Balankutty, A., Alpman, E., Lee, C. C., Nguyen, K. M., Lee, H., Ravi, A., Suzuki, S., Carlton, B. R., Kim, H. S., Verhelst, M., Pellerano, S., Kim, T., Venkatesan, S., Srivastava, D., Vandervoorn, P., Rizk, J., Jan, C., Ramamurthy, S., Yavatkar, R., Soumyanath, K.

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A 7.3-GHz, 55% tuning range emitter degenerated active inductor VCO by Zhan, J.H.C., Duster, J.S., Kornegay, K.T.

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An accurate semi-empirical saturation drain current model for LDD n-MOSFET by Kai Chen, Wann, H.C., Duster, J., Pramanik, D., Nariani, S., Ko, P.K., Hu, C.

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32nm x86 OS-compliant PC on-chip with dual-core Atom® processor and RF WiFi transceiver by Lakdawala, H., Schaecher, M., Chang-tsung Fu, Limaye, R., Duster, J., Yulin Tan, Balankutty, A., Alpman, E., Chun Lee, Suzuki, S., Carlton, B., Hyung Seok Kim, Verhelst, M., Pellerano, S., Tong Kim, Srivastava, D., Venkatesan, S., Hyung-jin Lee, Vandervoorn, P., Rizk, J., Chia-Hong Jan, Soumyanath, K., Ramamurthy, S.

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Temperature dependence of MOSFET substrate current by Huang, J.H., Zhang, G.B., Liu, Z.H., Duster, J., Wann, S.J., Ko, P., Hu, C.

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A nonvolatile semiconductor memory device in 6H-SiC for harsh environment applications by Li, C., Duster, J S, Kornegay, K T

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A MOSFET electron mobility model of wide temperature range (77 - 400 K) for IC simulation by Chain, Kenneth, Huang, Jian-hui, Duster, Jon, Ko, Ping K, Hu, Chenming

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Finite cell method compared to h-version finite element method for elasto-plastic problems by Abedian, A., Parvizian, J., Düster, A., Rank, E.

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A Fin-type independent-double-gate NFET by Fried, D.M., Nowak, E.J., Kedzierski, J., Duster, J.S., Komegay, K.T.

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A 10Gb/s injection-locked clock recovery circuit in 47GHz f/sub T/ SiGe BiCMOS by Jing-Hong Conan Zhan, Duster, J., Kornegay, K.

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A fully integrated, single-chip handset power amplifier in SiGe BiCMOS for W-CDMA applications by Rippke, I., Duster, J., Kornegay, K.

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A fully integrated, single-chip handset power amplifier in SiGe BiCMOS for W-CDMA applications by Rippke, I., Duster, J., Kornegay, K.

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A 2.4GHz WLAN transceiver with fully-integrated highly-linear 1.8V 28.4dBm PA, 34dBm T/R switch, 240MS/s DAC, 320MS/s ADC, and DPLL in 32nm SoC CMOS by Tan, Y., Duster, J., Fu, C.-T, Alpman, E., Balankutty, A., Lee, C., Ravi, A., Pellerano, S., Chandrashekar, K., Kim, H., Carlton, B., Suzuki, S., Shafi, M., Palaskas, Y., Lakdawala, H.

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An 18 GHz low noise high linearity active mixer in SiGe by Wang, Y., Duster, J.S., Kornegay, K.T., Hyun-min Park, Laskar, J.

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A single-chip variable supply voltage power amplifier by Rippke, I.A., Duster, J.S., Kornegay, K.T.

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