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    An analytical drain current model considering both electron and lattice temperatures simultaneously for deep submicron ultrathin SOI NMOS devices with self-heating

    An analytical drain current model considering both electron and lattice temperatures simultaneously for deep submicron ultrathin SOI NMOS devices with self-heating by Yu-Guang Chen, Shyh-Yih Ma, Kuo, J.B., Zhiping Yu, Duton, R.W.

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