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Search Results - ERGEZINGER, K.-H
Search Results - ERGEZINGER, K.-H
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Diffusion of Boron in Copper by Direct-Exchange Mechanism
by
Ittermann, B
,
Ackermann, H
,
Stöckmann, H
,
Ergezinger, K
,
Heemeier, M
,
Kroll, F
,
Mai, F
,
Marbach, K
,
Peters, D
,
Sulzer, G
Published in
Physical review letters
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Bulk-doping-controlled implantation site of boron in silicon
by
METZNER, H
,
SULZER, G
,
ACKERMANN, H
,
SEELINGER, W
,
ITTERMANN, B
,
FRANK, H.-P
,
FISCHER, B
,
ERGEZINGER, K.-H
,
DIPPEL, R
,
DIEHL, E
,
STOÊCKMANN, H.-J
Published in
Physical review. B, Condensed matter
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Implantation site of boron in heavily doped silicon: A β-NMR study
by
Metzner, H.
,
Sulzer, G.
,
Seelinger, W.
,
Ittermann, B.
,
Erank, H. -P.
,
Fischer, B.
,
Ergezinger, K. -H.
,
Dippel, R.
,
Diehl, E.
,
Stöckmann, H. -J.
,
Ackermann, H.
Published in
Hyperfine interactions
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Interstitial related defect of12B implanted into n- and p-type silicon
by
Frank, H. -P.
,
Almeida, T.
,
Diehl, E.
,
Ergezinger, K. -H.
,
Fischer, B.
,
Ittermann, B.
,
Mai, F.
,
Seelinger, W.
,
Weissenmayer, S.
,
Welker, G.
,
Ackermann, H.
,
St ckmann, H. -J.
Published in
Hyperfine interactions
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