Search Results - Egyenes, F

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  1. 1
    Conductance anisotropy of MOCVD-grown α-Ga2O3 films caused by (010) β-Ga2O3 filament-shaped inclusions

    Conductance anisotropy of MOCVD-grown α-Ga2O3 films caused by (010) β-Ga2O3 filament-shaped inclusions by Egyenes, F, Gucmann, F, Rosová, A, Dobročka, E, Hušeková, K, Hrubišák, F, Keshtkar, J, Ťapajna, M

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  2. 2
    Growth of α- and β-Ga2O3 epitaxial layers on sapphire substrates using liquid-injection MOCVD

    Growth of α- and β-Ga2O3 epitaxial layers on sapphire substrates using liquid-injection MOCVD by Egyenes-Pörsök, F, Gucmann, F, Hušeková, K, Dobro ka, E, Sobota, M, Mikolášek, M, Fröhlich, K, apajna, M

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  3. 3
    Conductance anisotropy of MOCVD-grown α-Ga 2 O 3 films caused by (010) β-Ga 2 O 3 filament-shaped inclusions

    Conductance anisotropy of MOCVD-grown α-Ga 2 O 3 films caused by (010) β-Ga 2 O 3 filament-shaped inclusions by Egyenes, F, Gucmann, F, Rosová, A, Dobročka, E, Hušeková, K, Hrubišák, F, Keshtkar, J, Ťapajna, M

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  4. 4
    Transport properties of Si-doped \boldsymbol-\mathbf}\mathbf} grown by liquid-injection MOCVD

    Transport properties of Si-doped \boldsymbol-\mathbf}\mathbf} grown by liquid-injection MOCVD by Egyenes, F., Gucmann, F., Dobrocka, E., Mikolasek, M., Husekova, K., Tapajna, M.

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  5. 5
    Structural and electrical properties of \text\mathrm transistors grown on 4H-SiC substrates

    Structural and electrical properties of \text\mathrm transistors grown on 4H-SiC substrates by Hrubisak, F., Husekova, K., Egyenes, F., Rosova, A., Kubranska, A., Dobrocka, E., Nadazdy, P., Keshtkar, J., Gucmann, F., Tapajna, M.

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  6. 6
    Growth of α- and β-Ga 2 O 3 epitaxial layers on sapphire substrates using liquid-injection MOCVD

    Growth of α- and β-Ga 2 O 3 epitaxial layers on sapphire substrates using liquid-injection MOCVD by Egyenes-Pörsök, F, Gucmann, F, Hušeková, K, Dobročka, E, Sobota, M, Mikolášek, M, Fröhlich, K, Ťapajna, M

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