A Complementary RF-LDMOS Architecture Compatible with 0.13 μm CMOS Technology by Mohapatra, N.R., Ruecker, H., Ehwald, K.E., Sorge, R., Barth, R., Schley, P., Schmidt, D., Wulf, H.E.

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BiCMOS integration of SiGe:C heterojunction bipolar transistors by Knoll, D., Heinemann, B., Ehwald, K.E., Rucker, H., Tillack, B., Winkler, W., Schley, P.

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The impact of channel engineering on the performance and reliability of LDMOS transistors by Mohapatra, N.R., Ehwald, K.E., Barth, R., Rucker, H., Bolze, D., Schley, P., Schmidt, D., Wulf, H.E.

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A low-cost SiGe:C BiCMOS technology with embedded flash memory and complementary LDMOS module by Knoll, D., Fox, A., Ehwald, K.E., Heinemann, B., Barth, R., Fischer, A., Rucker, H., Schley, P., Scholz, R., Korndorfer, F., Senapati, B., Stikanov, V.E., Tillack, B., Winkler, W., Wolf, Ch, Zaumseil, P.

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BEOL embedded RF-MEMS switch for mm-wave applications by Kaynak, M., Ehwald, K.E., Drews, J., Scholz, R., Korndorfer, F., Knoll, D., Tillack, B., Barth, R., Birkholz, M., Schulz, K., Sun, Y.M., Wolansky, D., Leidich, S., Kurth, S., Gurbuz, Y.

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Emitter Scaling of Single-Polysilicon SiGe:C HBTs with Highly Doped Base Layers by Knoll, D., Heinemann, B., Ehwald, K.E., Fischer, G.G.

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Characterization of an embedded RF-MEMS switch by Kaynak, M., Ehwald, K.E., Scholz, R., Korndorfer, F., Wipf, C., Sun, Y.M., Tillack, B., Zihir, S., Gurbuz, Y.

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Base currents of Si/SiGe/Si HBT in dependence on the processing conditions by Knoll, D., Fischer, G., Ehwald, K.E., Heinemann, B., Schley, P., Zeindl, H., Tillack, B., Morgenstern, T., Wolff, A.

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A flexible, low-cost, high performance SiGe:C BiCMOS process with a one-mask HBT module by Knoll, D., Ehwald, K.E., Heinemann, B., Fox, A., Blum, K., Rucker, H., Furnhammer, F., Senapati, B., Barth, R., Haak, U., Hoppner, W., Drews, J., Kurps, R., Marschmeyer, S., Richter, H.H., Grabolla, T., Kuck, B., Fursenko, O., Schley, P., Scholz, R., Tillack, B., Yamamoto, Y., Kopke, K., Wulf, H.E., Wolansky, D., Winkler, W.

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Cost-effective integration of an FN-programmed embedded flash memory into a 0.25μm SiGe:C RF-BiCMOS technology by Fox, A., Ehwald, K.E., Schley, P., Barth, R., Marschmeyer, S., Wolf, C., Stikanov, V.E., Gromovyy, A., Hudyryev, A.

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Comparison of P In Situ Spike Doped with as Implanted Poly Silicon Emitters Concerning Si/SiGe/Si HBT Application by Knoll, D., Heinemann, B., Ehwald, K.E., Schley, P., Ropke, W., Bolze, D., Schlote, J., Herzel, F., Fischer, G.

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Carbon doped SiGe heterojunction bipolar transistor module suitable for integration in a deep submicron CMOS process by Osten, H.J., Knoll, D., Heinemann, B., Rucker, H., Ehwald, K.E.

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A Low-Cost, High-Performance, High-Voltage Complementary BiCMOS Process by Knoll, D., Heinemann, B., Ehwald, K.E., Fox, A., Rucker, H., Barth, R., Bolze, D., Grabolla, T., Haak, U., Drews, J., Kuck, B., Marschmeyer, S., Richter, H.H., Chaimanee, M., Fursenko, O., Schley, P., Tillack, B., Kopke, K., Yamamoto, Y., Wulf, H.E., Wolansky, D.

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Cost-effective integration of an FN-programmed embedded flash memory into a 0.25 /spl mu/m RF-BiCMOS technology by Fox, A., Ehwald, K.E., Schley, P., Barth, R., Marschmeyer, S., Wolf, C., Stikanov, V.E., Gromovyy, A., Hudyryev, A.

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HBT before CMOS, a new modular SiGe BiCMOS integration scheme by Knoll, D., Rucker, H., Heinemann, B., Barth, R., Bauer, J., Bolze, D., Ehwald, K.E., Grabolla, T., Haak, U., Hunger, B., Kruger, D., Kurps, R., Marschmeyer, S., Richter, H.H., Schley, P., Tillack, B., Winkler, W.

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Modular integration of high-performance SiGe:C HBTs in a deep submicron, epi-free CMOS process by Ehwald, K.E., Knolll, D., Heinemann, B., Chang, K., Kitchgessner, J., Mauntel, R., Lim, I.S., Steele, J., Schley, P., Tillack, B., Wolff, A., Blum, K., Winkler, W., Pierschel, M., Jagdhold, U., Barth, R., Grabolla, T., Erzgraber, H.J., Hunger, B., Osten, H.J.

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