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Ammonothermal GaN: Morphology and properties
by
Bliss, David
,
Wang, Buguo
,
Suscavage, Michael
,
Lancto, Robert
,
Swider, Stacy
,
Eikenberry, Wayne
,
Lynch, Candace
Published in
Journal of crystal growth
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Carrier Lifetime Dynamics of Epitaxial Layer HVPE Gallium Arsenide Using Time-Resolved Experiments
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Eikenberry, Wayne E
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Journal Of Crystal Growth
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Inorganic Chemistry
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Photoluminescence
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A1. Characterization
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A2. Growth From Solutions
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B1. Nitrides
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Carrier Concentration
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Carrier Lifetime
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Charge Carriers
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Condensed Matter Physics
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Condensed Matter: Electronic Structure, Electrical, Magnetic, And Optical Properties
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Condensed Matter: Structure, Mechanical And Thermal Properties
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Cross-Disciplinary Physics: Materials Science; Rheology
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Crystal Growth
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Crystallography
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Crystals
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Diffraction
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Epitaxial Growth
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Exact Sciences And Technology
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Gallium Arsenides
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Gallium Nitrides
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Dtic Technical Reports
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Backfile Package - Materials Science [Yms]
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