A silicon molecular beam epitaxy system dedicated to device-oriented material research by Ni, W.-X., Ekberg, J.O., Joelsson, K.B., Radamson, H.H., Henry, A., Shen, G.-D., Hansson, G.V.

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Growth, electrical properties and reciprocal lattice mapping characterization of heavily B-doped, highly strained silicon-molecular beam epitaxial structures by Sardela, M.R., Radamson, H.H., Ekberg, J.O., Sundgren, J.-E., Hansson, G.V.

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Anomalies in the beam-foil measurements for δn=o transitions in highly ionized members of the Li, Na, and Cu sequences by Johnson, B. M., Gregory, D. C., Jones, K. W., Pegg, D. J., Griffin, P. M., Kruse, T. H., Cecchi, J. L., Ekberg, J. O.

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Relative level populations in beam-foil-excited C iv, N v, O vi, and F vii by Andresen, B., Denne, B., Ekberg, J. O., Engström, L., Huldt, S., Martinson, I., Veje, E.

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Study of the beam-foil excitation mechanism with the use of chlorine projectiles, 2-10 MeV by Jupén, C., Denne, B., Ekberg, J. O., Engström, L., Litzén, U., Martinson, I., Tai-Meng, W., Trigueiros, A., Veje, E.

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Assessment of uncertainty in parameter evaluation and prediction by Meinrath, G., Ekberg, C., Landgren, A., Liljenzin, J.O.

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