Modelling the spectral emission of multi-section quantum dot superluminescent light-emitting diodes by Crowley, M T, Patel, N, Saiz, T A, Emawy, M El, Nilsen, T A, Naderi, N A, Mukherjee, S D, Fimland, B O, Lester, L F

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Improved device performance of InAs∕GaAs quantum dot solar cells with GaP strain compensation layers by Laghumavarapu, R. B., El-Emawy, M., Nuntawong, N., Moscho, A., Lester, L. F., Huffaker, D. L.

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Improved device performance of In As ∕ Ga As quantum dot solar cells with GaP strain compensation layers by Laghumavarapu, R. B., El-Emawy, M., Nuntawong, N., Moscho, A., Lester, L. F., Huffaker, D. L.

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Ga Sb ∕ Ga As type II quantum dot solar cells for enhanced infraredspectral response by Laghumavarapu, R. B., Moscho, A., Khoshakhlagh, A., El-Emawy, M., Lester, L. F., Huffaker, D. L.

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Ga Sb ∕ Ga As type II quantum dot solar cells for enhanced infrared spectral response by Laghumavarapu, R. B., Moscho, A., Khoshakhlagh, A., El-Emawy, M., Lester, L. F., Huffaker, D. L.

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Predicting the spectral shape of multi-section quantum dot superluminescent LEDs by Patel, N., Crowley, M. T., Saiz, T. A., El-Emawy, M., Nilsen, T. A., Naderi, N. A., Mukherjee, S. D., Fimland, B. O., Lester, L. F.

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MOCVD Growth of InNxAs1-x on GaAs Using Dimethylhydrazine by El-Emawy, A.A., Cao, H.-J., Zhmayev, E., Lee, J.-H., Zubia, D., Osiński, M.

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Characterization of MOCVD-grown InNAs/GaAs quantum wells by Hongjun Cao, Nuntawong, N., El-Emawy, A.-R.A., Osinski, M.

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Properties of diffused resistors in solar-grade semicrystalline silicon by El-Emawy, A., Zekry, A., El-Koosy, M., Fikry, H.

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