Strain-Mediated Sn Incorporation and Segregation in Compositionally Graded Ge1–x Sn x Epilayers Grown by MBE at Different Temperatures by M. Eldose, Nirosh, Stanchu, Hryhorii, Das, Subhashis, Bikmukhametov, Ilias, Li, Chen, Shetty, Satish, Mazur, Yuriy I., Yu, Shui-Qing, Salamo, Gregory J.

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Strain-Mediated Sn Incorporation and Segregation in Compositionally Graded Ge1–xSnx Epilayers Grown by MBE at Different Temperatures by Eldose, Nirosh M., Stanchu, Hryhorii, Das, Subhashis, Bikmukhametov, Ilias, Li, Chen, Shetty, Satish, Mazur, Yuriy I., Yu, Shui-Qing, Salamo, Gregory J.

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Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer by Shetty, Satish, Kuchuk, Andrian V., Maia de Oliveira, Fernando, Kryvyi, Serhii, Li, Chen, Minor, Paul, Zamani-Alavijeh, Mohammad, M. Eldose, Nirosh, Das, Subhashis, Baral, Dinesh, Mazur, Yuriy I., Mantooth, H. Alan, Salamo, Gregory J.

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Thermal stability study of gallium nitride based magnetic field sensor by Shetty, Satish, Kuchuk, Andrian, Zamani-Alavijeh, Mohammad, Hassan, Ayesha, Eisner, Savannah R., Maia de Oliveira, Fernando, Krone, Alexis, Harris, John, Thompson, Josh P., Eldose, Nirosh M., Mazur, Yuriy I., Huitink, David, Senesky, Debbie G., Alan Mantooth, H., Salamo, Gregory J.

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Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors by Shetty, Satish, Kuchuk, Andrian V., Zamani-Alavijeh, Mohammad, Oliveira, Fernando Maia de, Hassan, Ayesha, Eisner, Savannah R., Eldose, Nirosh M., Baral, Dinesh, Mazur, Yuriy I, Huitink, David, Senesky, Debbie G., Mantooth, H Alan, Salamo, Gregory J.

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Evolution of kinetically controlled In-induced surface structure on Si(557) surface by Chauhan, Amit Kumar Singh, Eldose, Nirosh M., Mishra, Monu, Niazi, Asad, Nair, Lekha, Gupta, Govind

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Strain-Mediated Sn Incorporation and Segregation in Compositionally Graded Ge 1– x Sn x Epilayers Grown by MBE at Different Temperatures by M. Eldose, Nirosh, Stanchu, Hryhorii, Das, Subhashis, Bikmukhametov, Ilias, Li, Chen, Shetty, Satish, Mazur, Yuriy I., Yu, Shui-Qing, Salamo, Gregory J.

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Epitaxial growth and characterization of GaAs (111) on 4H-SiC by Das, Subhashis, M. Eldose, Nirosh, Stanchu, Hryhorii, Maia de Oliveira, Fernando, Benamara, Mourad, Mazur, Yuriy I., Chen, Zhong, Mantooth, Alan, Salamo, Gregory J.

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Comparison of Short-Range Order in GeSn Grown by Molecular Beam Epitaxy and Chemical Vapor Deposition by Liu, Shang, Liang, Yunfan, Zhao, Haochen, Eldose, Nirosh M, Jin-Hee Bae, Omar, Concepcion, Jin, Xiaochen, Chen, Shunda, Bikmukhametov, Ilias, Akey, Austin, Cline, Cory T, Alejandra Cuervo Covian, Wang, Xiaoxin, Li, Tianshu, Zeng, Yuping, Buca, Dan, Shui-Qing Yu, Salamo, Gregory J, Zhang, Shengbai, Liu, Jifeng

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