Search Results - Ems, S.C

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  1. 1
    Transcription, splicing and editing of plastid RNAs in the nonphotosynthetic plant Epifagus virginiana

    Transcription, splicing and editing of plastid RNAs in the nonphotosynthetic plant Epifagus virginiana by Ems, S.C. (Indiana Univ., Bloomington, IN (USA). Dept. of Biology), Morden, C.W, Dixon, C.K, Wolfe, K.H, Pamphilis, C.W. de, Palmer, J.D

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  2. 2
    Rapid evolution of the plastid translational apparatus in a nonphotosynthetic plant: loss or accelerated sequence evolution of tRNA and ribosomal protein genes

    Rapid evolution of the plastid translational apparatus in a nonphotosynthetic plant: loss or accelerated sequence evolution of tRNA and ribosomal protein genes by Wolfe, K.H, Morden, C.W, Ems, S.C, Palmer, J.D

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  3. 3
    Resistance peak at the superconducting transition of thin films of tin and indium

    Resistance peak at the superconducting transition of thin films of tin and indium by Ems, S.C., Swihart, J.C.

    Published in Physics letters. A
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  4. 4
    Polarization in p − p Elastic Scattering at High Energies

    Polarization in p − p Elastic Scattering at High Energies by Corcoran, M. D., Ems, S. C., Gray, S. W., Neal, H. A., Ogren, H. O., Polvado, R., Rust, D. R., Sauer, J. R.

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  5. 5
    Proton polarization in pp elastic and inclusive processes at beam momenta from 20 to 400 GeV/ c

    Proton polarization in pp elastic and inclusive processes at beam momenta from 20 to 400 GeV/ c by Corcoran, M., Ems, S. C., Gray, S. W., Lepore, R. M., Neal, H. A., Ogren, H. A., Polvado, R. O., Rust, D. R., Sauer, J. R., Walters, G. A.

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  6. 6
    A novel gate geometry for the IGBT: the trench planar insulated gate bipolar transistor (TPIGBT)

    A novel gate geometry for the IGBT: the trench planar insulated gate bipolar transistor (TPIGBT) by Spulber, O., Narayanan, E.M.S., Hardikar, S., De Souza, M.M., Sweet, M., Bose J.V., S.C.

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  7. 7
    The 6.5 kV clustered insulated gate bipolar transistor in homogeneous base technology

    The 6.5 kV clustered insulated gate bipolar transistor in homogeneous base technology by Luther-King, N, Sweet, M, Spulber, O, Vershinin, K, Ngw, C.K, Bose, S.C, De Souza, M.M, Sankara Narayanan, E.M

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  8. 8
    Monolithic integration of a high-performance clustered insulated gate bipolar transistor with low-voltage components to form a 3 kV intelligent power chip

    Monolithic integration of a high-performance clustered insulated gate bipolar transistor with low-voltage components to form a 3 kV intelligent power chip by Sweet, M, Ngw, C.K, Spulber, O, Ngwendson, J.V.L, Vershinin, K.V, Bose, S.C, De Souza, M.M, Narayanan, E.M.S

    Published in Microelectronics
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