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Role of Oxygen Vacancies in Short- and Long-Term Instability of Negative Bias-Temperature Stressed SiC MOSFETs
by
Ettisserry, Devanarayanan P.
,
Goldsman, Neil
,
Lelis, Aivars J.
Published in
IEEE transactions on electron devices
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Ieee Transactions On Electron Devices
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Charge Carrier Processes
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Density Functional Theory
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Discrete Fourier Transforms
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Mosfet
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Silicon Carbide
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Silicon Carbide Mosfet
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Threshold Voltage Instability
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