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Growth of nanodots on a strained GaAs epilayer using scanning tunneling microscope
by
Abel, Joseph
,
Kim, Dong Jun
,
Everett, E. Addison
,
Yang, Haeyeon
Published in
Journal of crystal growth
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Annealing induced transition of flat strained InGaAs epilayers into three-dimensional islands
by
Kim, Dong Jun
,
Everett, E. Addison
,
Yang, Haeyeon
Published in
Journal of applied physics
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Annealing induced transition of flat strained InGaAs epilayersinto three-dimensional islands
by
Kim, Dong Jun
,
Everett, E. Addison
,
Yang, Haeyeon
Published in
Journal of applied physics
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Journal Title
Journal Of Applied Physics
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Journal Of Crystal Growth
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Subjects
Physical Sciences
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Physics
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Physics, Applied
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Science & Technology
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A1. Diffusion
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1
A1. Nanostructures
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1
A1. Surfaces
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A3. Molecular Beam Epitaxy
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B1. Nanomaterials
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B2. Semiconducting Iii-V Materials
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B2. Semiconducting Iii–V Materials
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Cross-Disciplinary Physics: Materials Science; Rheology
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Crystallography
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Exact Sciences And Technology
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Materials Science
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Materials Science, Multidisciplinary
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Methods Of Deposition Of Films And Coatings; Film Growth And Epitaxy
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Molecular, Atomic, Ion, And Chemical Beam Epitaxy
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Nanoscale Materials And Structures: Fabrication And Characterization
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Quantum Dots
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American Institute Of Physics:jisc Collections:transitional Journals Agreement 2021-23 (Reading List)
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Science Citation Index Expanded (Web Of Science)
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Aip Digital Archive
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American Institute Of Physics
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Sciencedirect Journals
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Elsevier
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Backfile Package - Materials Science [Yms]
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Backfile Package - Physics General (Legacy) [Ypa]
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