Search Results - Ezis, Andris

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  1. 1
    Comparisons of Design and Yield for Large-Area 10-kV 4H-SiC DMOSFETs

    Comparisons of Design and Yield for Large-Area 10-kV 4H-SiC DMOSFETs by Howell, R.S., Buchoff, S., Van Campen, S., McNutt, T.R., Hearne, H., Ezis, A., Sherwin, M.E., Clarke, R.C., Singh, R.

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  2. 2
    Experimental Demonstration of AlN Heat Spreaders for the Monolithic Integration of Inline Phase-Change Switches

    Experimental Demonstration of AlN Heat Spreaders for the Monolithic Integration of Inline Phase-Change Switches by El-Hinnawy, Nabil, Borodulin, Pavel, King, Matthew R., Furrow, Colin, Padilla, Carlos R., Ezis, Andris, Nichols, Doyle T., Paramesh, Jeyanandh, Bain, James A., Young, Robert M.

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  3. 3
    Origin and Optimization of RF Power Handling Limitations in Inline Phase-Change Switches

    Origin and Optimization of RF Power Handling Limitations in Inline Phase-Change Switches by El-Hinnawy, Nabil, Borodulin, Pavel, King, Matthew R., Padilla, Carlos R., Ezis, Andris, Nichols, Doyle T., Paramesh, Jeyanandh, Bain, James A., Young, Robert M.

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  4. 4
    Methodology for accurate extrapolation of InGaP/GaAs HBT safe operating area (SOA) for variations in emitter area and ballast resistor size

    Methodology for accurate extrapolation of InGaP/GaAs HBT safe operating area (SOA) for variations in emitter area and ballast resistor size by Howell, Robert S., Lewis, Randall, Henry, H. George, Hearne, Harold, Brown, Deas, Dawson, Dale, Ezis, Andris

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  5. 5
    A 10-kV Large-Area 4H-SiC Power DMOSFET With Stable Subthreshold Behavior Independent of Temperature

    A 10-kV Large-Area 4H-SiC Power DMOSFET With Stable Subthreshold Behavior Independent of Temperature by Howell, R.S., Buchoff, S., Van Campen, S., McNutt, T.R., Ezis, A., Nechay, B., Kirby, C.F., Sherwin, M.E., Clarke, R.C., Singh, R.

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  6. 6
    Comparisons of Design and Yield for Large-Area 10-kV 4H-SiC DMOSFETs : Silicon carbide devices and technology

    Comparisons of Design and Yield for Large-Area 10-kV 4H-SiC DMOSFETs : Silicon carbide devices and technology by HOWELL, Robert S, BUCHOFF, Steven, VAN CAMPEN, Stephen, MCNUTT, Ty R, HEARNE, Harold, EZIS, Andris, SHERWIN, Marc E, CLARKE, R. Chris, SINGH, Ranbir

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  7. 7
    A 10-kV Large-Area 4H-SiC Power DMOSFET With Stable Subthreshold Behavior Independent of Temperature : Silicon carbide devices and technology

    A 10-kV Large-Area 4H-SiC Power DMOSFET With Stable Subthreshold Behavior Independent of Temperature : Silicon carbide devices and technology by HOWELL, Robert S, BUCHOFF, Steven, VAN CAMPEN, Stephen, MCNUTT, Ty R, EZIS, Andris, NECHAY, Bettina, KIRBY, Christopher F, SHERWIN, Marc E, CLARKE, R. Chris, SINGH, Ranbir

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  8. 8
    A novel based feed design for high power, high frequency heterojunction bipolar transistors

    A novel based feed design for high power, high frequency heterojunction bipolar transistors by Salib, Mike, Hahn, Hyo-Kun, Kositz, John, Zingaro, John, Ezis, Andris, Gupta, Aditya

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  9. 9
    Device Process Physics

    Device Process Physics by Ezis, Andris

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  10. 10
    Temperature dependence of transient and conventional annealed AlGaAs/GaAs MODFET ohmic contacts

    Temperature dependence of transient and conventional annealed AlGaAs/GaAs MODFET ohmic contacts by Ikossi-Anastasiou, K., Ezis, A., Rai, A.K.

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  11. 11
    100 A and 3.1 kV 4H-SiC GTO thyristors

    100 A and 3.1 kV 4H-SiC GTO thyristors by Van Campen, S., Ezis, A., Zingaro, J., Storaska, G., Clarke, R.C., Elliott, K., Temple, V., Hits, D., Thompson, M., Roe, K., Hansen, T.

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