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Changes of electrical properties by Al content of AlxGa1−xAs in pHEMT structures as observed using HRXRD
by
Soetedjo, Hariyadi
,
Ezrol Esham, S.
,
Sabtu, Idris
,
Mohd Razman, Y.
,
Abdul Fatah, A.M.
Published in
Microelectronics
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Changes of electrical properties by Al content of Al Ga1−As in pHEMT structures as observed using HRXRD
by
Soetedjo, Hariyadi
,
Ezrol Esham, S.
,
Sabtu, Idris
,
Mohd Razman, Y.
,
Abdul Fatah, A.M.
Published in
Microelectronics
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Microelectronics
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Engineering
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Engineering, Electrical & Electronic
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Epitaxial Layer
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Hrxrd
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Lattice Constant
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Nanoscience & Nanotechnology
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Phemt
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Science & Technology
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Science & Technology - Other Topics
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