Influence of the growth conditions of LT-AlN on quality of HT-AlN growth on Si (1 1 1) by metalorganic chemical vapor deposition by Chernykh, M.Y., Ezubchenko, I.S., Mayboroda, I.O., Zanaveskin, M.L.

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Tunneling Current in Oppositely Connected Schottky Diodes Formed by Contacts between Degenerate n-GaN and a Metal by Maiboroda, I. O., Grishchenko, J. V., Ezubchenko, I. S., Sokolov, I. S., Chernych, I. A., Andreev, A. A., Zanaveskin, M. L.

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GaN-based heterostructures with CVD diamond heat sinks: A new fabrication approach towards efficient electronic devices by Chernykh, M.Y., Andreev, A.A., Ezubchenko, I.S., Chernykh, I.A., Mayboroda, I.O., Kolobkova, E.M., Khrapovitskaya, Yu. V., Grishchenko, J.V., Perminov, P.A., Sedov, V.S., Martyanov, A.K., Altakhov, A.S., Komlenok, M.S., Pashinin, V.P., Sinogeykin, A.G., Konov, V.I., Zanaveskin, M.L.

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Influence of a low-temperature GaN cap layer on the electron concentration in AlGaN/GaN heterostructure by Andreev, A. A., Vavilova, E. A., Ezubchenko, I. S., Zanaveskin, M. L., Maiboroda, I. O.

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Electroluminescence of single CdSe nanocrystals induced by scanning tunneling microscope by Trifonov, A.S., Osad'ko, I.S., Ezubchenko, I.S., Prokhorova, I.G., Snigirev, O.V.

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Fluctuations of electroluminescence intensity of single CdSe nanocrystals excited by scanning tunneling microscope current by Osad'ko, I.S., Trifonov, A.S., Ezubchenko, I.S., Prokhorova, I.G.

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