Search Results - Fangfei Ming

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  1. 21
    Nano-Cold-Cathode Electron Source Based on Plasmon-Mediated Emission

    Nano-Cold-Cathode Electron Source Based on Plasmon-Mediated Emission by Shen, Yan, Ding, Yuyue, Chen, Yinyao, Song, Zheyu, Cui, Tao, Cheng, Ao, Tang, Shuai, Cao, Zhaolong, Ming, Fangfei, Zhang, Yu, Chen, Huanjun, Xu, Ningsheng, Deng, Shaozhi

    Published in ACS photonics
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  2. 22
    Controllable dissociations of PH3 molecules on Si(001)

    Controllable dissociations of PH3 molecules on Si(001) by Liu, Qin, Lei, Yanhua, Shao, Xiji, Ming, Fangfei, Xu, Hu, Wang, Kedong, Xiao, Xudong

    Published in Nanotechnology
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  3. 23
    Controllable dissociations of PH 3 molecules on Si(001)

    Controllable dissociations of PH 3 molecules on Si(001) by Liu, Qin, Lei, Yanhua, Shao, Xiji, Ming, Fangfei, Xu, Hu, Wang, Kedong, Xiao, Xudong

    Published in Nanotechnology
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  4. 24
    Controllable dissociations of PH sub(3) molecules on Si(001)

    Controllable dissociations of PH sub(3) molecules on Si(001) by Liu, Qin, Lei, Yanhua, Shao, Xiji, Ming, Fangfei, Xu, Hu, Wang, Kedong, Xiao, Xudong

    Published in Nanotechnology
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  5. 25
    Superconductivity in a hole-doped Mott-insulating triangular adatom layer on a silicon surface

    Superconductivity in a hole-doped Mott-insulating triangular adatom layer on a silicon surface by Wu, Xuefeng, Fangfei Ming, Smith, Tyler S, Liu, Guowei, Ye, Fei, Wang, Kedong, Johnston, Steven, Weitering, Hanno H

    Published in arXiv.org
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  6. 26
    Controlled Implantation of Phosphorous Atoms into a Silicon Surface Lattice with a Scanning Tunneling Microscopy Tip

    Controlled Implantation of Phosphorous Atoms into a Silicon Surface Lattice with a Scanning Tunneling Microscopy Tip by Liu, Guowei, Shao, Xiji, Chen, Congrun, Wang, Xixian, Wu, Xuefeng, Ming, Fangfei, Wang, Kedong

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  7. 27
    Equivalence of electronic and mechanical stresses in structural phase stabilization: A case study of indium wires on Si(111)

    Equivalence of electronic and mechanical stresses in structural phase stabilization: A case study of indium wires on Si(111) by Kim, Sun-Woo, Kim, Hyun-Jung, Ming, Fangfei, Jia, Yu, Zeng, Changgan, Cho, Jun-Hyung, Zhang, Zhenyu

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  8. 28
    Assembling and Disassembling Ag Clusters on Si(111)-(7×7) by Vertical Atomic Manipulation

    Assembling and Disassembling Ag Clusters on Si(111)-(7×7) by Vertical Atomic Manipulation by Ming, Fangfei, Wang, Kedong, Pan, Shuan, Liu, Jiepeng, Zhang, Xieqiu, Yang, Jinlong, Xiao, Xudong

    Published in ACS nano
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  9. 29
    Probing the generalized magicity of Ag nanoclusters constructed on Si(111) by atomic manipulation

    Probing the generalized magicity of Ag nanoclusters constructed on Si(111) by atomic manipulation by Ming, Fangfei, Zhong, Guohua, Liu, Qin, Wang, Kedong, Zhang, Zhenyu, Xiao, Xudong

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  10. 30
    Coupled Sublattice Melting and Charge-Order Transition in Two Dimensions

    Coupled Sublattice Melting and Charge-Order Transition in Two Dimensions by Smith, Tyler S, Fangfei Ming, Daniel González Trabada, González, César, Soler-Polo, Diego, Flores, Fernando, Ortega, José, Weitering, Hanno H

    Published in arXiv.org
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  11. 31
    Zero-bias anomaly in nano-scale hole-doped Mott insulators on a triangular silicon surface

    Zero-bias anomaly in nano-scale hole-doped Mott insulators on a triangular silicon surface by Fangfei Ming, Smith, Tyler S, Johnston, Steven, Snijders, Paul C, Weitering, Hanno H

    Published in arXiv.org
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  12. 32
    Zero-bias anomaly in nanoscale hole-doped Mott insulators on a triangular silicon surface

    Zero-bias anomaly in nanoscale hole-doped Mott insulators on a triangular silicon surface by Ming, Fangfei, Smith, Tyler S., Johnston, Steven, Snijders, Paul C., Weitering, Hanno H.

    Published in Physical review. B
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  13. 33
    Identifying the Numbers of Ag Atoms in Their Nanostructures Grown on a Si(111)-(7 × 7) Surface

    Identifying the Numbers of Ag Atoms in Their Nanostructures Grown on a Si(111)-(7 × 7) Surface by Ming, Fangfei, Wang, Kedong, Zhang, Xieqiu, Liu, Jiepeng, Zhao, Aidi, Yang, Jinlong, Xiao, Xudong

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  14. 34
    Realization of a hole-doped Mott insulator on a triangular silicon lattice

    Realization of a hole-doped Mott insulator on a triangular silicon lattice by Fangfei Ming, Johnston, Steve, Mulugeta, Daniel, Smith, Tyler S, Vilmercati, Paolo, Lee, Geunseop, Maier, Thomas A, Snijders, Paul C, Weitering, Hanno H

    Published in arXiv.org
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  15. 35
    Atomic and electronic structure of doped Si(111)(2root3x2root3)R30(degrees)-Sn interfaces

    Atomic and electronic structure of doped Si(111)(2root3x2root3)R30(degrees)-Sn interfaces by Yi, Seho, Fangfei Ming, Huang, Ying-Tzu, Smith, Tyler S, Peng, Xiyou, Tu, Weisong, Mulugeta, Daniel, Diehl, Renee D, Snijders, Paul C, Jun-Hyung Cho, Weitering, Hanno H

    Published in arXiv.org
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  16. 36
    Atomic and electronic structure of doped Si ( 111 ) ( 2 3 × 2 3 ) R 30 ∘ -Sn interfaces

    Atomic and electronic structure of doped Si ( 111 ) ( 2 3 × 2 3 ) R 30 ∘ -Sn interfaces by Yi, Seho, Ming, Fangfei, Huang, Ying-Tzu, Smith, Tyler S., Peng, Xiyou, Tu, Weisong, Mulugeta, Daniel, Diehl, Renee D., Snijders, Paul C., Cho, Jun-Hyung, Weitering, Hanno H.

    Published in Physical review. B
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  17. 37
    Atomic and electronic structure of doped Si(111)(23×23)R30∘-Sn interfaces

    Atomic and electronic structure of doped Si(111)(23×23)R30∘-Sn interfaces by Yi, Seho, Ming, Fangfei, Huang, Ying-Tzu, Smith, Tyler S, Peng, Xiyou, Tu, Weisong, Mulugeta, Daniel, Diehl, Renee D, Snijders, Paul C, Cho, Jun-Hyung, Weitering, Hanno H

    Published in Physical review. B
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  18. 38
    Controlling adsorption and spin configurations of Co atoms on Si ( 111 ) − ( 7 × 7 )

    Controlling adsorption and spin configurations of Co atoms on Si ( 111 ) − ( 7 × 7 ) by Liu, Qin, Zhong, Guohua, Ming, Fangfei, Wang, Kedong, Xiao, Xudong

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  19. 39
    Equivalence of Electronic and Mechanical Stresses in Structural Phase Stabilization: A Case Study of Indium Wires on Si(111)

    Equivalence of Electronic and Mechanical Stresses in Structural Phase Stabilization: A Case Study of Indium Wires on Si(111) by Sun-Woo, Kim, Hyun-Jung, Kim, Fangfei Ming, Yu, Jia, Zeng, Changgan, Jun-Hyung Cho, Zhang, Zhenyu

    Published in arXiv.org
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  20. 40
    Equivalence of electronic and mechanical stresses in structural phase stabilization: A case study of indium wires on SK(111)

    Equivalence of electronic and mechanical stresses in structural phase stabilization: A case study of indium wires on SK(111) by Kim, Sun-Woo, Kim, Hyun-Jung, Ming, Fangfei, Jia, Yu, Zeng, Changgan, Cho, Jun-Hyung, Zhang, Zhenyu

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