EE15 Cost-Consequence Analysis of Ofatumumab in Comparison With Other Disease-Modifying Therapies and Best Supportive Care for the Treatment of Relapsing-Remitting Multiple Scleros... by Farhane, F, Bhan, V, Clift, F, Baharnoori, M, Thomas, K, Patel, BP, Blanchette, F, Adlard, NE, Vudumula, U, Gudala, K, Dutta, N, Grima, D, Mouallif, S

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Cancer indifférencié du cavum : aspects épidémiologiques, cliniques et thérapeutiques by Farhane, F., Hassouni, K.

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Prise en charge du carcinome épidermoïde du col utérin dans le service de radiothérapie du centre hospitalier universitaire Hassan-II de Fès (à propos de 160 cas) by Alami, Z., Farhane, F., Loukili, K., Bouayad, N., Mesbah, O., Elmazghi, A., Bouhafa, T., Hassouni, K.

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Raman micro spectroscopy for in vitro drug screening: subcellular localisation and interactions of doxorubicin by Farhane, Z, Bonnier, F, Casey, A, Byrne, H. J

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Cellular discrimination using in vitro Raman micro spectroscopy: the role of the nucleolus by Farhane, Z, Bonnier, F, Casey, A, Maguire, A, O'Neill, L, Byrne, H J

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In vitro label free screening of chemotherapeutic drugs using Raman micro-spectroscopy: towards a new paradigm of spectralomics by Farhane, Z., Nawaz, H., Bonnier, F., Byrne, H.J.

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Cellular discrimination using in vitro Raman micro spectroscopy: the role of the nucleolusElectronic supplementary information (ESI) available. See DOI: 10.1039/c5an01157d by Farhane, Z, Bonnier, F, Casey, A, Maguire, A, O'Neill, L, Byrne, H. J

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Resistance increase due to electromigration induced depletion under TSV by Frank, T, Chappaz, C, Leduc, P, Arnaud, L, Lorut, F, Moreau, S, Thuaire, A, El Farhane, R, Anghel, L

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Investigation on TSV impact on 65nm CMOS devices and circuits by Chaabouni, H, Rousseau, M, Leduc, P, Farcy, A, El Farhane, R, Thuaire, A, Haury, G, Valentian, A, Billiot, G, Assous, M, De Crecy, F, Cluzel, J, Toffoli, A, Bouchu, D, Cadix, L, Lacrevaz, T, Ancey, P, Sillon, N, Flechet, B

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Improved Vt and Ioff characteristics of NMOS transistors featuring ultra-shallow junctions obtained by plasma doping (PLAD) by Pouydebasque, A., Muller, M., Boeuf, F., Lenoble, D., Lallement, F., Grouillet, A., Halimaoui, A., El Farhane, R., Delille, D., Skotnicki, T.

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A conventional 45nm CMOS node low-cost platform for general purpose and low power applications by Boeuf, F., Arnaud, F., Basso, M.T., Sotta, D., Wacquant, F., Rosa, J., Bicais-Lepinay, N., Bernard, H., Bustos, J., Manakli, S., Gaillardin, M., Grant, J., Skotnicki, T., Tavel, B., Duriez, B., Bidaud, M., Gouraud, P., Chaton, C., Morin, P., Todeschini, J., Jurdit, M., Pain, L., De-Jonghe, V., El-Farhane, R., Jullian, S.

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Investigation of the dose loss during annealing in nitrogen of shallow-implanted arsenic by Farhane, R.E., Salvetti, F., Wacquant, F., Laviron, C., Froment, B., Muller, A., Pouydebasque, A., Halimaoui, A.

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NMOS-junction integration study with ultra-high temperature non-diffusive laser annealing for the 45 nm node and below by Pouydebasque, A., Dumont, B., Wacquant, F., Halimaoui, A., Laviron, C., Lenoble, D., El-Farhane, R., Duriez, B., Arnaud, F., Carron, V., Rossato, C., Pokrant, S., Salvetti, F., Dray, A., Boeuf, F., Skotnicki, T.

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