Search Results - Farrés, E.

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  1. 1
    First human trials of a dry electrophysiology sensor using a carbon nanotube array interface

    First human trials of a dry electrophysiology sensor using a carbon nanotube array interface by Ruffini, G., Dunne, S., Fuentemilla, L., Grau, C., Farrés, E., Marco-Pallarés, J., Watts, P.C.P., Silva, S.R.P.

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  2. 2
    On the breakdown statistics of very thin SiO2 films

    On the breakdown statistics of very thin SiO2 films by SUNE, J, PLACENCIA, I, BARNIOL, N, FARRES, E, MARTIN, F, AYMERICH, X

    Published in Thin solid films
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  3. 3
    After-breakdown conduction through ultrathin SiO2 films in metal/insulator/semiconductor structures

    After-breakdown conduction through ultrathin SiO2 films in metal/insulator/semiconductor structures by SUNE, J, FARRES, E, AYMERICH, X

    Published in Thin solid films
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  4. 4
    On the SiOx transition layer in abrupt Si-SiO2 chemical interface in MOS structures

    On the SiOx transition layer in abrupt Si-SiO2 chemical interface in MOS structures by SUNE, J, PLACENCIA, I, BARNIOL, N, FARRES, E, AYMERICH, X

    Published in Surface science
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  5. 5
    ENOBIO - First Tests of a Dry Electrophysiology Electrode using Carbon Nanotubes

    ENOBIO - First Tests of a Dry Electrophysiology Electrode using Carbon Nanotubes by Ruffini, G., Dunne, S., Farres, E., Watts, P.C.P., Mendoza, E., Silva, S.R.P., Grau, C., Marco-Pallares, J., Fuentemilla, L., Vandecasteele, B.

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  6. 6
    Oceanpal®: Monitoring sea state with a GNSS-R coastal instrument

    Oceanpal®: Monitoring sea state with a GNSS-R coastal instrument by Caparrini, M., Egido, A., Soulat, F., Germain, O., Farres, E., Dunne, S., Ruffini, G.

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    Conference Proceeding
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  7. 7
    After-breakdown conduction through ultrathin SiO 2 films in metal/insulator/semiconductor structures

    After-breakdown conduction through ultrathin SiO 2 films in metal/insulator/semiconductor structures by Suñe, J., Farrés, E., Aymerich, X.

    Published in Thin solid films
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  8. 8
    Nondestructive multiple breakdown events in very thin SiO2 films

    Nondestructive multiple breakdown events in very thin SiO2 films by SUNE, J, FARRES, E, PLACENCIA, I, BARNIOL, N, MARTIN, F, AYMERICH, X

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  9. 9
    Breakdown of SiO2 films in VLSI MOS structures

    Breakdown of SiO2 films in VLSI MOS structures by Suñe, J, Placencia, I, Farrés, E, Barniol, N, Aymerich, X

    Published in Vacuum
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  10. 10
    On the oxide interface micro-roughness in MOS devices

    On the oxide interface micro-roughness in MOS devices by Placencia, I, Suñé, J, Farrés, E, Barniol, N, Aymerich, X

    Published in Vacuum
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  11. 11
    Simple STM theory

    Simple STM theory by Barniol, N, Farrés, E, Martin, F, Suñé, J, Placencia, I, Aymerich, X

    Published in Vacuum
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  12. 12
    Gate oxide breakdown statistics in wearout tests of metal-oxide-semiconductor structures

    Gate oxide breakdown statistics in wearout tests of metal-oxide-semiconductor structures by Suñé, J., Placencia, I., Farrés, E., Barniol, N., Martin, F., Aymerich, X.

    Published in Microelectronics
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  13. 13
    The statistical distribution of breakdown from multiple breakdown events in one sample

    The statistical distribution of breakdown from multiple breakdown events in one sample by Farres, E, Nafria, M, Sune, J, Aymerich, X

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  14. 14
    On the SiO x transition layer in abrupt Si-SiO 2 chemical interface in MOS structures

    On the SiO x transition layer in abrupt Si-SiO 2 chemical interface in MOS structures by Suñé, J., Placencia, I., Barniol, N., Farrés, E., Aymerich, X.

    Published in Surface science
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  15. 15
    Breakdown of SiO 2 films in VLSI MOS structures

    Breakdown of SiO 2 films in VLSI MOS structures by Suñe, J, Placencia, I, Farrés, E, Barniol, N, Aymerich, X

    Published in Vacuum
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  16. 16
    On the breakdown statistics of very thin SiO 2 films

    On the breakdown statistics of very thin SiO 2 films by Suñé, J., Placencia, I., Barniol, N., Farrés, E., Martín, F., Aymerich, X.

    Published in Thin solid films
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  17. 17
    ENOBIO dry electrophysiology electrode; first human trial plus wireless electrode system

    ENOBIO dry electrophysiology electrode; first human trial plus wireless electrode system by Ruffini, G., Dunne, S., Farres, E., Cester, I., Watts, P.C.P., Ravi, S., Silva, P., Grau, C., Fuentemilla, L., Marco-Pallares, J., Vandecasteele, B.

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  18. 18
    Oxide Degradation and Breakdown in Stressed MOS Capacitors

    Oxide Degradation and Breakdown in Stressed MOS Capacitors by Placencia, I., Sune, J, Barniol, N., Fares, E., Aymerich, X.

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  19. 19
    On the SiOx transition layer in abrupt Si-SiO2 chemical interface in MOS structures

    On the SiOx transition layer in abrupt Si-SiO2 chemical interface in MOS structures by Suñé, J., Placencia, I., Barniol, N., Farrés, E., Aymerich, X.

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  20. 20
    On the SiO x transition layer in abrupt Si-SiO 2 chemical interface in MOS structures

    On the SiO x transition layer in abrupt Si-SiO 2 chemical interface in MOS structures by Suñé, J., Placencia, I., Barniol, N., Farrés, E., Aymerich, X.

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