Search Results - Felsl, H.P.

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  1. 1
    Different types of avalanche-induced moving current filaments under the influence of doping inhomogeneities

    Different types of avalanche-induced moving current filaments under the influence of doping inhomogeneities by Milady, S., Silber, D., Niedernostheide, F.-J., Felsl, H.P.

    Published in Microelectronics
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  2. 2
    A Novel Diode Structure with Controlled Injection of Backside Holes (CIBH)

    A Novel Diode Structure with Controlled Injection of Backside Holes (CIBH) by Chen, Min, Lutz, J., Domeij, M., Felsl, H.P., Schulze, H.-J.

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  3. 3
    The CIBH Diode - Great Improvement for Ruggedness and Softness of High Voltage Diodes

    The CIBH Diode - Great Improvement for Ruggedness and Softness of High Voltage Diodes by Felsl, H.P., Pfaffenlehner, M., Schulze, H., Biermann, J., Gutt, T., Schulze, H.-J., Chen, M., Lutz, J.

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  4. 4
    1200V Emcon4 freewheeling diode - a soft alternative

    1200V Emcon4 freewheeling diode - a soft alternative by Hille, F., Bassler, M., Schulze, H., Falck, E., Felsl, H.P., Schieber, A., Mauder, A.

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  5. 5
    Influence of buffer structures on static and dynamic ruggedness of high voltage FWDs

    Influence of buffer structures on static and dynamic ruggedness of high voltage FWDs by Heinze, B., Felsl, H.P., Mauder, A., Schulze, H.J., Lutz, J.

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  6. 6
    A diode structure with anode side buried p doped layers for damping of dynamic avalanche

    A diode structure with anode side buried p doped layers for damping of dynamic avalanche by Min Chen, Lutz, J., Felsl, H.P., Schulze, H.-J.

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  7. 7
    Electro-Thermal Simulation of Current Filamentation in 3.3-kV Silicon p+- n-- n+Diodes with Differenth Edge Terminations

    Electro-Thermal Simulation of Current Filamentation in 3.3-kV Silicon p+- n-- n+Diodes with Differenth Edge Terminations by Felsl, H.P., Falck, E., Niedernostheide, F.J., Milady, S., Silber, D., Lutz, J.

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  8. 8
    Ruggedness analysis of 3.3 kV high voltage diodes considering various buffer structures and edge terminations

    Ruggedness analysis of 3.3 kV high voltage diodes considering various buffer structures and edge terminations by Heinze, B., Lutz, J., Felsl, H.P., Schulze, H.-J.

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  9. 9
    Ruggedness analysis of 3.3kV high voltage diodes considering various buffer structures and edge terminations

    Ruggedness analysis of 3.3kV high voltage diodes considering various buffer structures and edge terminations by Heinze, B., Lutz, J., Felsl, H.P., Schulze, H.-J.

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  10. 10
    The influence of bulk parameters on the switching behavior of FWDs for traction application

    The influence of bulk parameters on the switching behavior of FWDs for traction application by Felsl, H.P., Falck, E., Pfaffenlehner, M., Lutz, J.

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