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Electroreflectance spectra of InGaN/AlGaN/GaN quantum-well heterostructures
by
Avakyants, L. P.
,
Badgutdinov, M. L.
,
Bokov, P. Yu
,
Chervyakov, A. V.
,
Shirokov, S. S.
,
Yunovich, A. E.
,
Bogdanov, A. A.
,
Vasil’eva, E. D.
,
Nikolaev, D. A.
,
Feopentov, A. V.
Published in
Semiconductors (Woodbury, N.Y.)
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Semiconductors
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Aluminum Gallium Nitrides
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Electric Contacts
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Electric Fields
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Energy-Level Transitions
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Epitaxial Growth
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Epitaxy
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Ev Range 01-10
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Gallium Nitrides
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Heat Sinks
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Heterostructures
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Indium Gallium Nitrides
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Interference
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Light Emitting Diodes
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Luminescence
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Materials Science
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Multi Quantum Wells
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